Design Of Memory-computation Integrated Logic Gate Based On Memristo

In this paper,two new 3T1M(3 Transistors 1 Memristor)structures are proposed for the design of storage-computing integrated logic gate structures.The new 3T1 M structure is the core of the new storage-computing integrated logic gate structures designed in this paper.There are three main aspects in this work:Preparation and characterization of carboxylated chitosan(CCS)-based memristors.Graphene quantum dots(GQDs)was mixed with CCS solution.The Al/CCS:GQDs/ITO memristors were prepared by spin-coating and vacuum vapor deposition.The I-V characteristics were tested for the construction of the memristor model.A simulation model was built for the Al/CCS:GQDs/ITO memristor.The established memristor model with a positive threshold voltage of 3.1 V,a negative threshold voltage of-1.1 V,high and low resistance states of 8 kΩ and 40 Ω.The I-V characteristics of the memristor model were simulated.The model error was 0.412%(<1.5%).The 3T1 M structure and the storage-computing integrated logic gate structures are designed and simulated.Based on the memristor model,3T1 M structures were proposed.And based on 3T1 M structures,an AND storage-computing integrated logic gate,an OR storage-computing integrated logic gate,a usual logic storage-computing integrated logic gate with check bit,and a usual storage-computing integrated logic gate were designed.All of the proposed logic gates are simulated using the established memristor model,and all of them can realize Boolean logic operations and data storage/readout functions.And a new four-bit overrun adder is designed and implemented adder function.