Research On Memristor-Based Binary Logic And Storage Circuits

The memristor is a non-linear circuit component with memory characteristics,which has nanometer size,non-volatility,variable resistance,and is called "the fourth basic circuit component".The resistance of the memristor can be changed between a high-resistance state and a low-resistance state.The different resistance state can be used to simulate the switching state of a conventional CMOS transistor,construct a memristor-based logic circuit,and replace the transistor to implement a logic operation.Because of the excellent characteristic,memristor has great application potential in logic circuits and information storage.The work of this thesis can be divided into the following four parts:Firstly,we discuss the classic HP memristor model,and analyzes the relationship between magnetic flux,charge and current through the mathematical function of HP memristor model.The characteristics of HP memristor are verified by Matlab numerical simulations and SPICE circuit simulations.Then a more accurate memristor model-Simmons tunnel junction model is introduced,but its mathematical function is too cumbersome.So the VTEAM model is introduced.The experimental simulations show that the VTEAM model is closer to the actual memristor and more generic.Secondly,we introduce the three existing memristor-based logic circuits,which are MRL(Memristor Ratioed Logic)circuit,MAD Gates(Memristor As Drivers Gates)logic circuit and IMPLY logic circuit.The effectiveness of each circuit was verified by mathematical derivation and circuit simulations.At the same time,through experimental analysis,we found that each circuit has its own corresponding deficiencies:the MRL logic circuit has a single function;The input and output of the MAD Gates are memrisitance,so the initial state of the memristor must be set before each operation,and the cascading characteristics are normal;The IMPLY logic circuit requires more operational steps for each logic function,resulting in increased circuit delay.Then,a memristor-CMOS hybrid logic circuit is proposed in this thesis,which can realize the four basic logic functions(AND-OR-XOR-XNOR)in the same circuit.Compared with MAD Gates,MRL,IMPLY logic circuits,the number of memristors and power consumption of proposed circuit are greatly reduced,circuit performance is better,and circuit efficiency is greatly improved.According to the proposed hybrid circuit in the thesis,a new full-adder circuit and binary image encryption circuit are designed.Compared with several existing memristor-based full-adder circuits,the full-adder circuit designed in this thesis can realize the same function only with fewer components.The binary image encryption circuit designed in this thesis can realize binary image encryption by two different encryption methods,and the key and the circuit are independent of each other,which improves the reliability of the encryption result.Finally,based on the non-volatile characteristics and variable resistance of the memristor,we designed a memristor-based immediate memory circuit.Through the circuit experiment simulations,it is proved that no matter what state the memory is in,the circuit can store the information effectively in real time.On this basis,a large-scale storage array is constructed,so that the information can be stored in real time and stored for a long time.