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Research On Memristor-Based Logic Circuit And Leakage Current

Posted on:2018-01-12Degree:MasterType:Thesis
Country:ChinaCandidate:R YangFull Text:PDF
GTID:2428330566951571Subject:Systems Engineering
Abstract/Summary:PDF Full Text Request
As the time goes by,the integrated circuits have reached technical limit in terms of volume and performance,whose development has encountered a bottleneck,and it is difficult to have a breakthrough.Therefore,it is urgent to replace the transistors with another component to continue Moore's law.Memristor,is the fourth element after resistor,inductance and capacitance.As a new element,memristor possesses the properties of nanoscale,nonvolatility,low power,which can act as a candidate of the next generation electronic component.Meanwhile,memristor is compatible with the transistor technology,which is easy to realize various logic circuits.In crossbar array,it can be stacked which can form three-dimensional structure.In this way storage can greatly reduce the volume.It is of theoretical and practical value to realize the logic circuits and cross array data storage based on memristor.In this thesis,the mechanism of HP memristor is analyzed,and the working mechanism of memristor is described.Meanwhile,the threshold model and Vteam model of memristor are analyzed.Then designing various of logic gates and a full adder based on the characteristics of memristor.In order to improve the storage capacity,this thesis discusses the crossbar array structure of single memristor storage unit,analyzing the leakage current problem of crossbar array,and introduces the structure of antiseries memristor as a cross array storage unit.This thesis analyzes the change of unit resistance and semi logic state in different writing operation process,and design a new write mode,which reduces the changes of half-selected unit resistance and improves the stability of writing operations.Finally,designing the storage of addition operation based on memristor,which storage the results of full adder to cross array,and introduces the other operation module whose results storage to cross array storage.The correctness of the design is verified by simulation.In this thesis,the feasibility of the logic circuit and the stability of the writing mode are explained by theoretical analysis,simulation and quantitative comparison.
Keywords/Search Tags:Memristor, Logic gate, Full adder, Crossbar array, Leakage current
PDF Full Text Request
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