Design And Implementation Of Resistive Switching Memory Peripheral Circuit

With the development of the information age, the storage technology has been developed rapidly. In order to meet the requirements of large-scale storage systems, the new memory which is higher density, smaller size, faster speed, and more erasable number, is becoming a research hotspot. Now, nanometer cross structure based resistive random access memory, with its excellent storage advantages, has been widely concerned in the field of integrated electronics. Resistive switching memory has the characteristics of high storage density, low power consumption,small size, compatibility with the CMOS process, is the focus of future research of storage technology. In order to achieve the application of resistance switching memory in the industry, need to carefully study the electrical characteristics and the external circuit resistance switching device. The main work of this paper is according to the resistive switching memory read and write, read and write the logic circuit are studied and implemented, and the resistance switching memory test.Firstly, analyzing the types and characteristics of the semiconductor memory, based on the analysis of limitations of the current storage technology has the characteristics of their parameters, and then through the electrical characteristics and resistance of resistive element change mechanism, study on resistive structure based resistive memory read and write the logic principle.Secondly, the writing process in the storage principle of resistive random access memory and reading of the storage unit, bipolar characteristics based on 1R structure, designed the storage array variable resistance memory read and write the whole circuit, and through the design and Simulation of each module circuit, the design of read and write program.Finally, according to the resistive random access memory and a read and write access controller, designed to satisfy the requirements of resistive random access memory read and write function, the module has carried on the simulation test, finally downloaded to the FPGA development board hardware debugging. The validation results show that the resistance change, to read and write data to memory can be correctly, meet the design requirements.