Design Of 32-36GHz Voltage-Controlled Oscillator For Ultra Wide Band Millimeter Wave Frequency Source

With the development of communication technology and the continuous growth of communication requirements,the traditional wireless transmission standards and frequency bands are difficult to meet the needs of future communication systems.Millimeter-wave frequency band has rich spectrum resources,and it has broad application prospects in the future 5G communication systems,biomedical and radar fields.In a wireless communication system,a frequency source is an indispensable key device.The frequency source provides a local oscillator signal for the wireless system,and its tuning range and phase noise have an extremely important influence on the channel quality of the entire communication system.In the millimeter wave band,a phase locked loop is a common frequency source structure.With the continuous progress of SiGe BiCMOS process,its performance has been greatly improved,while retaining the advantages of low power consumption and high integration of the CMOS process.The use of silicon-based processes to design high-performance,low-power communications chips has become a major research focus.Voltage-controlled oscillator is one of the core components of frequency source.Designing a wide tuning range and low phase noise voltage-controlled oscillator has strong practical significance and research value.This article uses a 0.13?m SiGe BiCMOS process to design a 32~36GHz VCO for ultra wide band millimeter wave frequency sources.Since the performance of the inductor provided in the technology library is difficult to meet the design requirements in the millimeter wave band,this paper designs and simulates the on-chip inductor.The voltage-controlled oscillator adopts the differential Colpitts oscillator circuit structure,and the application of techniques such as increasing output signal amplitude and noise filtering optimizes the phase noise performance of the circuit.Because of the serious influence of the millimeter-wave frequency band parasitism,this paper uses ADS to simulate the electromagnetic field of the on-chip passive devices and wiring,and to extract parasitic parameters of other devices through Cadence Virtuoso.Combining the simulation of electromagnetic field with the simulation of parasitic parameters,the circuit-field hybrid simulation is performed.The paper includes circuit design,presimulation,layout design,and circuit-field hybrid simulation.The voltage-controlled oscillator power supply voltage is 3.3V,and the results of the circuit-field hybrid simulation show that the voltage controlled oscillator can meet the project's index requirements under different temperature conditions at the TT process corners.In the TT process corner,the tuning range of the VCO is 31.84~36.6GHz at 27°C,the maximum phase noise of VCO is-78.48dBc/Hz@100kHz and-98.51dBc/Hz@1MHz,the overall operating current is 43.96 mA.The VCO designed by this subject meets the requirements of the system and can be applied to an ultra wide band millimeter wave frequency source chip.