Research And Design Of Millimeter-Wave Power Amplifier Chip Based On Silicon-based Technology

In recent years,the application of communication systems based on the millimeter wave frequency band has been increasing.Compared with the narrow bandwidth and crowded spectrum of the sub 6GHz frequency band,the application of the millimeter wave frequency band has an absolute advantage in the data transmission rate and the amount of available spectrum.The silicon-based process is widely used in the territory of millimeter-wave circuits due to its low cost,high integration,and high cut-off frequency.Therefore,the research of millimeter wave transceiver chip based on siliconbased technology is a popular direction of modern transceiver chip research.Scholars all over the world are studying it.In the introduction part,this thesis summarizes the research on power amplifier.Then in chapter 2,the device basis and design theory of the millimeter-wave power amplifier based on silicon-based technology are discussed respectively.In the fourth,fifth and sixth chapters,three millimeter-wave power amplifiers based on silicon-based technology are introduced respectively.The summary and Prospect of this thesis are placed in Chapter 7.The fourth chapter introduces the principle of neutralizing capacitor technology and introduces the technology to solve the common mode stability of differential circuit.Based on the above technology,a power amplifier with an operating frequency of 94 GHz was designed and filmed.The amplifier uses TSMC 65-nm CMOS process.The amplifier adopts a two-stage cascaded differential common-source structure with neutralizing capacitors,and all matching is realized based on transformers.The power of the power amplifier achieves a peak gain of 11.2d B,has a 3d B bandwidth range of 84.9-102.3GHz,its Psat is 9.7d Bm(@94GHz),and the corresponding peak PAE is 10.7%.Chapter 5 introduces the principle of power combining.Design and cast a power amplifier with an operating frequency of 71-76 GHz.The amplifier uses TSMC 65-nm CMOS process.The amplifier adopts two paths of current and power synthesis,and the single path is a two-stage cascaded differential common-source structure with neutralizing capacitors.The design has a peak gain of 11.5d B,and has a 3d B bandwidth range of 66.6-80.3GHz,with a P1 d B of 11.6d Bm(@73.5GHz),a Psat of 14.9d Bm(@73.5GHz),and a peak PAE of 9.2 %.Chapter 6 introduces the principle of phase change in gain control and the gain control circuit designed in this thesis.A 77 GHz variable gain power amplifier based on SMIC 28-nm CMOS process was designed and filmed.The amplifier adopts two paths of current and power synthesis,and the single path is cascaded with four stages of amplifiers.The peak gain of 77 GHz power amplifier is 19.3d B.The amplifier has reached a 3d B bandwidth range of 72.6-81.2GHz,its P1 d B is 13.9d Bm(@77GHz),its Psat is 16.1d Bm(@77GHz),its peak PAE is 16.5%.This design has a large signal gain range of 10 d B with 1d B steps.The phase difference of the output signal is not higher than 0.43°under different gain states.