| Currently,5G communication technology is developing in full swing.The traditional sub6 GHz band is already very crowded and cannot meet the current demand for fast data transmission.On the contrary,the millimeter-wave band has become a research hotspot in recent years due to the relative abundance of spectrum resources.With the continuous progress of silicon-based technology,the characteristic frequency is constantly increasing,and it has the advantages of low manufacturing cost,high integration of devices and high yield of finished products,so it has the possibility to replace the III-V process which was widely used in the millimeter-wave band.The transmitter is an important part of the wireless communication system,and its performance requirements are constantly improving.Power amplifiers and voltage-controlled oscillators,as the core components,are important determinants of transmitter performance.This paper is based on three different silicon-based processes and conducts research on the two core components mentioned above.The main research contents are as follows:(1)5G millimeter-wave power amplifier: A two-stage common-source amplifier cascade structure is adopted,a neutralizing capacitor is used to improve the stability of the amplifier,and a transformer-based matching network is used to achieve output,inter-stage and input matching.The simulation results show that the 3dB bandwidth of the power amplifier is22.7～29.6GHz,the saturation output power is 18.3dbm at 27 GHz,the output power at 1dB compression point is 15.7dbm,and the maximum PAE is 35.5%.(2)Ka-band power amplifier: The CE-CB cascode amplifier is used as the power unit,and the transformer-based current power combiner is used to increase the output power.The method of wideband design in power amplifier is analyzed in detail,and the realization operation is given based on the simulation results.The linearity of power amplifier is improved by using adaptive bias circuit.Finally,the layout was designed and taped out The simulation results show that the gain variation range of the power amplifier in the whole Ka band is less than 2dB.At35 GHz,the saturated output power is 19.4dbm,the 1dB compression point output power is18.5dbm,and the PAE is 20%.The 1dB compression point output power in Ka band is greater than 16.5dbm.(3)Voltage-controlled oscillator: The structure of the Colpitts oscillator is adopted,and the tuning range of the oscillator is improved by using the switched capacitor structure.The phase noise of the oscillator is reduced by optimizing some components in the circuit.Finally,the layout was designed and taped out for testing,and the test results were analyzed.The simulation results show that the frequency range is 9.07～9.76 GHz,and the phase noise of the frequency offset 1MHz is-98.89 dBc/Hz.The frequency range of the measured results is 8.58～9.02 GHz,and the phase noise at a frequency offset of 1MHz is-87.13 dBc/Hz. |
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