Research And Design Of Silicon-Based CMOS Power Amplifier For Internet Of Things Applications

As an important part of the RF front-end link in the radar and communication systems,the performance of the power amplifier significantly affects the power consumption and signal transmission distance of the transmitter.This thesis mainly studies the bandwidth expansion,gain improvement and efficiency enhancement technologies of power amplifiers in IoT applications,and designs three power amplifiers with different performance based on silicon-based CMOS technology.The main work is as follows:1.A miniaturized class-J power amplifier broadband matching network structure is proposed,and an X-band class-J power amplifier is designed and implemented for verification.Compared with the existing class-J power amplifier,the area is reduced by two-thirds.The test results show that the 3dB bandwidth of the power amplifier is 6.2～11.8 GHz,and within this range,the gain ripple is always less than 1.5 dB.Among the 3 dB bandwidth,the peak power added efficiency can reach 20.3%,and the output 1dB compression point is 10.5 dBm.2.A novel type of capacitance compensation structure is proposed,which uses transistors and source degeneration resistors to replace the traditional neutralizing capacitor structure in order to improve the gain and stability,and a differential power amplifier is designed and implemented for verification.Compared with the traditional neutralizing capacitor structure,the stability is improved by about 40%.The test results show that as small signal inputs,the power amplifier gain can reach 23.0 dB,the power amplifier is supplied by 1.2V voltage,the output saturation power can reach 12.0 dBm with the peak power added efficiency of 21.0%.3.A high back-off efficiency Doherty power amplifier is designed,based on the π-type equivalent model of the transmission line and realizes the post-matching network design.The simulation results show that the output power of the power amplifier can reach 15.7 dBm at the frequency of 10.5 GHz,the peak power added efficiency is 33.3%,and the efficiency at the 6dB back-off point reaches 15%,which is 7%higher than that of the class-AB power amplifier.