Silicon Based Terahertz Low Noise Amplifier Design

With the advancement of wireless communication technology,especially the development of the fifth-generation mobile communication technology,traditional spectrum resources can no longer meet the increasing demand for high-speed data transmission.Therefore,in order to obtain wider spectrum resources,the fifth generation of mobile communications has moved closer to the millimeter wave frequency band.The electromagnetic wave has a low attenuation atmospheric window in the G-band(140GHz-220GHz),which makes many applications possible in this band.In the receiver,the low-noise amplifier plays an important role,which directly determines the noise performance of the entire link.Compared with the CMOS process,the Si Ge process has the characteristics of high cut-off frequency and low high-frequency loss,which is very suitable for the terahertz frequency band.In this paper,a 0.13?m Si Ge BICMOS process is used to design a low-noise amplifier that works in the 220GHz frequency band.In this thesis,the 0.13?m SiGeBiCMOS process is used to design a low-noise amplifier that works in the 220GHz frequency band.The low-noise amplifier adopts a four-stage Cascode structure,and the input and output are single-ended.Each stage of the circuit adopts noise cancellation skill and gain boosting method to get both the lowest possible noise figure,and the higher AC gain.A inter-stage T-type matching network is used to ensure broadband matching characteristics.Finally,each stage of the circuit adopts the TSV component to achieve ideal AC grounding.In order to ensure the accuracy of the simulation results,all signal traces in the layout layout,including laminated metal,transistors and the connection heads of the traces,have been simulated by electromagnetic fields.The final circuit uses road-field co-simulation method to obtain the simulation results.After the circuit design,layout design and road-field co-simulation were completed,tape-out and chip testing were carried out.The chip area is0.42mm~2,and the co-simulation results show:DC power consumption is 35.2m W,peak power gain is 10.9d B,noise figure is 15.4d B(@220GHz),3d B bandwidth is 17GHz(207GHz-224GHz),input 1d B compression point is-22.3d Bm.The simulation results have reached the index requirements.