The Study Of High Frequency SiGe Heterojunction Bipolar Transistors (HBT) Low-noise Amplifier

The wireless communication technologies are being greatly developed in recent years, so high performance devices and circuits are being greatly required. SiGe-HBT not only has the same low cost and high density as Si device, but has the same high frequency performance as GaAs, so SiGe HBT and its integrated circuit are being applied widely in equipment used in wireless telecommunication. On basis of huge wireless market, the main work concentrates on SiGe HBT and its low noise circuit fabrication on isolated-type substrate. The study includes two major portions: study of SiGe HBT based on isolated-type substrate and analysis and design of High frequency SiGe low noise amplifier. First, fabricate SiGe HBT on isolated-type substrate. As compared to bulk SiGe-HBT, SiGe HBT on the isolated type substrate have a higher Early voltage, maximum oscillation frequency, and breakdown voltage. Apply buried-metal self-aligned process and ion implantation technology to minish base resistance and emitter resistance to acquire low-noise SiGe HBT. Buried-metal self-aligned process can maximize touch area of metal semiconductor by buried-metal structure, and transform metal-semiconductor touch to metal-metal touch. In this case, minish touch resistance and junction area without improving precision of optics equipment, ulteriorly improve frequency performance and noise performance of SiGe HBT. Improve adulterate density of outer base region with ion implantation technology to minish outer base resistance and touch-resistance, and good ohm touch can be acquired. Island-type huge area lateral-corrupt isolation based on isolated-type substrate was used for realizing reliable dc isolation, high efficiency ac isolation. Introduce methods used for test SiGe HBT's model parameters. Extract SiGe HBT's model parameters with 'BEB'software, and use it design SiGe low noise amplifier. Analyze SiGe HBT's noise model, impedance-matching method and elements that effect circuit's linearity. Design a SiGe low noise amplifier's structure with active source bias. Low noise amplifier can simultaneously acquire noise matching and power matching. Design SiGe low noise amplifier with Agilent's ADS software. Introduce how to model and implement passive elements in integrated circuit, and give methods used for optimize squire inductor on chip. Write a program with...