Sige Hfic Broadband Low Noise Amplifier

Low noise amplifier is widely used in front-end of a transceiver in mobile communication, electronic counterwork and other fields, whose performance makes significant effect on the wireless transceiver. Design methodology is discussed on the aspects of lower power, lower cost,wide band, good linearity and lower noise. The relative technology is as follows:1. To solve the lower noise and cost problem, SiGe device, instead of Si and GaAs device, is used in the WLNA. SiGe device not only holds the high performances as GaAs device, but also has the lower cost as Si device. In addition, the BiCMOS process of SiGe device is compatible with CMOS process of Si device.2. To reduce power dissipation of the amplifier, a kind of on/off technology is used in the circuit. With a little bias current circuit to control the main bipolar transistor operation, the transistor will be in a state of ON/OFF.3. To keep smooth gain, good VSWR, and fewer devices, a feed-back technology is adopted. Balance technology to design WLNA is done by other authors, however, which is very expensive. So it will not be introduced in this dissertation.4. To make use of parasitic parameter to design the circuit: because parasitic inductance induced by packaging could not only influence the circuit characteristics, but also lead to a design failure, the inductor value needed in the circuit can be designed in the amplifier according to the size of parasitic inductance.5. In order to keep gain smooth, enhance output power and efficiency, and reduce reflect factor and attenuation, inner matching networks are needed. With the kind of design of 0.5-6GHz WLNA, a new type of amplifier with ON/OFF function, based on SiGe device, is presented, which is improved by adopting parasitic parameter with SiGe HIT-KIT 0.35μm BiCMOS process. At present simulation is finished successfully, and the amplifier is coming to be commercialized.