Research On The Construction Of Ternary Memristor And The Application Of Ternary Digital Logic Circuit Based On The Cascade Of Threshold Type Binary Memristors

Memristor is considered to be the fourth passive basic circuit element after resistance,capacitance and inductance.It has the advantages of small size,low power consumption,and nonvolatility.Since the memristor was proposed,the related model research has mainly focused on binary and continuous memristors,but compared with these two memristors,ternary memristors also have great research value.Research shows that the ternary memristor has the advantages of carrying more information and can effectively reduce the circuit area.It has huge application potential in the fields of chaotic circuits,digital logic circuits,and non-volatile memory.The classical computer architecture is based on binary logic,but in the era of artificial intelligence,it is extremely difficult for traditional binary computers to imitate some of the complex functions of the human brain.Ternary logic has more logic levels and is expected to realize more complex functions in computers.Compared with binary logic,ternary logic has some significant advantages,such as more information transmitted by a single signal line,lower circuit complexity and fewer interconnections.Tri-valued memristor has three different resistance states,which can represent three kinds of logic values respectively,which creates favorable conditions for constructing a ternary logic circuit.In addition,tri-valued memristor can also be used as a storage unit in nonvolatile memory.By stacking the tri-valued memristors in the form of a cross array and designing the corresponding peripheral read-write circuit,the function of fast access to ternary signals can be realized.Therefore,this paper proposes a construction method of the ternary memristor,and designs a series of ternary combinational logic circuits and a tri-valued memristor cross array based on the tri-valued memristor.The main research contents and innovations of this article are as follows:(1)The characteristics of the series and parallel circuits of the binary memristor are studied,and the influence of the parameters and connection direction of the binary memristor on the resistance of the equivalent circuit are analyzed.On this basis,a method of constructing a tri-valued memristor based on a series or parallel circuit of binary memristors is proposed,and the feasibility of this method is verified by LTSpice circuit simulation.In addition,the influence of the amplitude,frequency and type of the input signal on the characteristics of the tri-valued memristor are further analyzed.(2)A voltage threshold-type tri-valued memristor is constructed based on the construction method of the tri-valued memristor proposed above.On this basis,the digital logic circuit with the resistance of memristor as the logic state variable is studied,and a series of ternary combinational logic circuits based on tri-valued memristor are designed,including ternary encoder,ternary decoder,ternary comparator and ternary data selector.Finally,the effectiveness of the designed ternary combinational logic gate is verified by LTSpice simulation.(3)The mechanism and solution of sneak paths in the memristor cross array are introduced.Based on this,the memristor cross array based on the tri-valued memristor and the corresponding array reset and read/write circuit are designed.In addition,taking the constructed memristor cross array as the memory,combined with a ternary encoder and a ternary decoder,the function of encoding-storing-decoding of the ternary signal is realized.Finally,the designed circuit is simulated and verified on the LTSpice software.