Volatile And Non-volatile Resistive Characteristics Of Cu₂O Memristor

The explosive growth of data-intensive and computing-intensive industries in the information age,along with the cloud services popularize in recent years,has put forward higher requirements for data computing efficiency,storage speed and memory density.The memristor based on non-volatile resistance is the most anticipated next-generation memory,and the multi-value modulated conductance will shine in the application of neuromorphic computing,filtering,logic and in-memory computing devices.The volatile memristors,which feature spontaneous decay of device conductance,own the distinct combination of high similarity to the biological neurons and synaptic forgetting characteristics,can be used to simulate synaptic function and play a core roll on the application of artificial neural components.Memristors with both volatile and non-volatile resistive characteristics can be expected to simulate the complete process of information memory,forgetting,and processing of neurons and neuronal synapses.At present,most of the memristor research on volatile and non-volatile resistive switching characteristics is aimed at the regulation of metal atoms and oxygen vacancies.Non-volatile and volatile,memory and forgetting correspond to each other and contradict each other,and it is usually necessary to find a balance between the two.Therefore,this study uses P-type Cu vacancy Cu₂O film as the resistive function layer,which has the advantages of low vacancy generation energy,low vacancy migration barrier,CMOS process compatibility,and stable performance,implementing the design and preparation of Cu₂O memristors,as well as the research on the resistive performance,volatility,non-volatile characteristics and mechanism of P-type vacancy memristive devices,are of great significance for the development of full-function neuron devices.The specific research is as follows:(1)Optimization of the resistive characteristics of Cu₂O-based memristors.Optimizing the preparation conditions of magnetron sputtering,and developing a single-component Cu₂O film and its memristive device.Specifically,it includes electrode adaptation,size reduction and device structure optimization,and explores the influence of the devices interface barrier,device leakage current,and temperature characteristics,etc.Finally,combining device performance,structure and electrical characteristics,it is proposed that the formation and rupture of copper vacancy conductive filaments lead to resistive switching behavior,the low-resistance state exhibits ohmic conductivity due to the existence of copper vacancy conductive filaments,and the high-resistance state is the combined effect of the remaining conductive filaments and the interface Schottky barrier.(2)Research on the regulation of volatile and non-volatile resistive characteristics of P-type vacancy Cu₂O memristor.By regulating the Icc,it is found that the volatile and non-volatile behaviors of the device are probabilistic behaviors related to limiting current:When the Icc is small(<1?A),the device exhibits stable volatility,and when the Icc is large(>60?A),the device exhibits stable non-volatility.As the Icc of the device increases,the probability of volatile resistance of the device becomes smaller and smaller,and the probability of non-volatile resistance becomes larger.The retention,endurance and conductance modulation characteristics of non-volatile devices are studied.Finally,combining the performance of the device and the resistance change characteristic curve fitting,a model is constructed,and it is proposed that the Icc controls the stability and quantity of the conductive filaments in the device,thereby regulating the volatile and non-volatile resistance behavior of the device.