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Study On Non-volatile Storage Method Based On Memristor

Posted on:2016-05-02Degree:MasterType:Thesis
Country:ChinaCandidate:M ChenFull Text:PDF
GTID:2348330479953281Subject:Systems Engineering
Abstract/Summary:PDF Full Text Request
With the coming of the big data's era, more and more data need to be stored. The development of modern society puts forward more requirements for performance and capacity of the storage device. However, according to Moore's law, the size of the volume and the performance of the integrated circuits reach their limit. Memristor, known as the next generation of nonvolatile memory device which can replace flash memory, has these characteristics, including SRAM's quick storage speed, DRAM's simple structure, nonvolatile characteristics of flash, shorter switching time than phase change memory and compatible with the CMOS. These advantages make memristor become the landmark of new non-volatile memory technology. At present, memristor is widely applied to the crossbar storage, which brings the dawn of the development of storage devices.Firstly, this thesis makes an in-depth analysis on physical mechanism of the TiO2 memristor, and expounds the switching mechanism of memristor, mainly including the electron tunneling process and thermionic emission process. Meanwhile, analysis of the exponential model and the threshold model of memristor are conducted according to the switching mechanism of memristor, and the analysis results are validated by simulation results. Then based on this physical mechanism, this thesis introduces the characteristics of memristor, and expounds the influence of pulse signal on memristance. Then read, write, and erase circuits based on memristor memory cell are designed and validated by the simulation results. Next, this thesis introduces crossbar memory based on memristor, analyses the sneak-current problem which is the key issue in crossbar memory systems leading to great degradation in their performance and power efficiency. Then this thesis designs a circuit to eliminate the effect of sneak paths, which can be validated by simulation results. Based on the characteristics of memristor, the theory of the file tree system is analyzed and the file management system of memristor is designed, including creating, search, delete, expand and contract algorithm. Based on the file tree system, the memory of memristor can traverse every memory cell, then it can carry out the read, write, erase operation.The research results of this thesis involves in some problem of the non-violate memory based on memristor, including physical mechanism of memristor, the read, write, and erase circuits based on memristor memory cell, the sneak-path current problem of crossbar memory and file management system. These research results will provide theoretical supports and simulation results for developing the non-volatile memory based on memristor, and provide new ideas in memristor memory research.
Keywords/Search Tags:Memristor, Non-volatile memory, Switching mechanism, Crossbar memory, Sneak paths, File management system
PDF Full Text Request
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