Design Of GaN-based Microwave Transistor Test Fixture Module

Gallium nitride(GaN)is the third-generation semiconductor,the advantage of this material include high electron mobility?excellent band gap?high operating frequency?high breakdown voltage?high saturated electron speed,etc.It has become an excellent material for the preparation of microwave devices.In the 5G era,wireless base stations require radio frequency power amplifiers have higher working frequency and efficiency,microwave transistors are the key device of power amplifier.Comparing with microwave transistors made by Si?Ga As material,the GaN based microwave transistor can satisfy the requirement of power amplifier of 5G era preferably.The physical characteristics of the bonding wire play an important role in the transmission characteristics of the microwave transistor.Microwave transistor testing is an important method to obtain the electrical characteristics of devices,it isn't only the basic for accurate device characterization but also the precondition of modeling.On this background,we model and simulate the bonding wire of microwave transistors and design test fixtures module respectively.The main contents are as follows:(1)This article has conducted a research on the inner connection technology of radio frequency microwave transistor packaging,focusing on the wire bonding connection packaging methods,exploring the relation between length?diameter?arch height of the bonding wire with transmission performance of devices.We get a set of optimal wire bonding parameters.(2)We selecte CGH40010 of Cree Company as device under test.The transistor is not matched in package,self-excited oscillation happens during the testing.We make50-ohm fixture and TRL(Thru Reflect Line)calibration part to calibrate the network analyzer and the S parameters of the transistor is extracted accurately.In order to test the large signal performance,we design impedance alterable test fixture.