Design Of Readout Circuit System Based On Graphene-silicon Charge Coupled Device Array

As the main tool for humans to observe the world,sensor technology has always been the focus of scientific researchers all over the world.High-performance image sensors play a pivotal role in scientific research,life,production and other aspects.However,the existing commercial siliconbased detectors always have some problems,such as detection signal too weak,detection range too narrow,and excessive noise in the readout circuit.How to improve the performance of silicon-based photodetectors is an urgent problem to be solved.Graphene's zero band gap energy band structure,as well as its excellent optical,electrical,mechanical and other properties have attracted extensive attention from the scientific research community.It is easy to be transferred to silicon and other semiconductor substrates to couple with silicon-based optoelectronic devices,and significantly improve device performance and performance.Based on these advantages,this article conducted the following studies:1.Participated in the design of a charge-coupled device array(FE-CCD Array)based on graphene/oxide/silicon structure,and studied the working principle of the device by testing various parameters of the device.This device uses the field effect characteristics of graphene to adjust the device,realizes the linear array level signal reading of the charge-coupled pixel array,and through the test under different lasers,broadening the detection wavelength range of the traditional silicon-based CCD to the near-infrared band(375-980nm).2.Based on the FE-CCD array device,we designed a high-quality,low-noise,high-speed readout circuit.This circuit is characterized by simulation and testing.Among them,there are the threeorder transimpedance amplifier circuit,Butterworth low-pass filter circuit and differential correlation double sampling circuit.This circuit can achieve 10 times amplification of the output current and effective noise reduction.3.Based on the design of the FE-CCD array device and readout circuit,an imaging system with a1x10 pixel array was built,and the imaging experiment under visible light was completed.Due to the integral effect within the pixel of the FE-CCD array device,the imaging result has the characteristics of high saturation,clear edges,and short imaging time,which has extremely high application prospects and commercial value.