Gate-Controlled Diode And Charge-Coupled Device Based On Graphene-Silicon System

The unique zero-bandgap structure,excellent electrical and optical properties of graphene have drawn the attention of the scientific community since its discovery.Graphene can be easily transferred to any substrate and also coupled with silicon-based devices effectively,which may enhance the performance of optoelectronic devices.Based on these characteristics,this paper mainly studies the following topics:1.The negative differential resistance behavior of graphene/silicon dioxide/silicon(GIS)and graphene/silicon(GS)hybrid structure was investigated.The space charge and electric field distribution of the MOS + Schottky structure were simulated by COMSOL software.And the surface recombination speed was also studied.The gate-controlled graphene/silicon diode structure was proposed for the first time to study the influence of surface recombination in GIS junction.2.The charge-coupled device(FE-CCD)based on graphene/silicon dioxide/silicon structure was proposed for the first time.The working principle of this device was analyzed by capacitance-voltage curve,transfer characteristic curve and so on.The graphene's filed effect makes this device achieve pixel-level signal readout and broaden the detection wavelength range of silicon-based device into 400-1900 nm.3.Linear FE-CCD device and driver circuit were designed to achieve the image capture in visible and infrared condition.This device can achieve random readout like CMOS image and also charge transfer like traditional CCD,and has high sensitivity,high gain,easy to fabricate,with high application value.