Preparation Of High Manganese Silicon Thin Films For Optoelectronic Devices

As a kind of environment-friendly semiconductor material,higher manganese silicide has many advantages and has great application potential in thermoelectric and photoelectric properties.In the current research,there are several orders of magnitude differences in the selection of base pressure for the preparation of higher manganese silicide.Due to the active properties of manganese,oxides often exist in the products during the preparation process,and the reasons and solutions have not been specially studied.In this paper,the base vacuum,substrates and intermediate layers are taken as the research objects,and the XRD,SEM and Raman spectra were used to characterize and analyze the structure and morphology of the obtained films.The main conclusions are as follows:(1)Using MnO and MnO2 as raw materials,the main product is Mn3O4 under the process of preparing higher manganese silicide.Under the condition of controlling a little surplus of MnO2,this process is suitable for preparing Mn3O4.The base pressure has a regulating effect on the particle size of Mn3O4,and the recommended range is 8×10-4?7×10-5 Pa.(2)The single-phase higher manganese silicide has been successfully prepared under 5×10-4 Pa base pressure by magnetron sputtering and vacuum annealing.(3)Oxide and its substrate are not conducive to the preparation of higher manganese silicide,so oxide substrate should be avoided,while the natural oxide layer of Si substrate has little effect on the results.The morphology quality of higher manganese silicide prepared on<100>oriented Si substrate is significantly better than that on<111>oriented Si substrate,but the morphology quality of<111>oriented Si substrate became the best after adding Si interlayer.(4)In the presence of MnO in the reactant,the addition of Si interlayer can significantly reduce the original high content of MnO,and significantly increase the proportion of higher manganese silicide.By controlling the sputtering time of Si interlayer,MnO can be almost completely eliminated.The mechanism is that the density of Si interlayer is different from that of Si substrate,which can control the reaction rate and Si atom ratio.(5)Many experimental phenomena indicate that MnO may react with Si to form higher manganese silicide.Based on this study,we can expand the new preparation process of higher manganese silicide,improve the quality of it,reduce the preparation requirement of it,and provide specific control methods.It has practical significance to promote the development of optoelectronic devices,and also has reference value to the preparation of other metal silicides.