Study On The Growth And Utilization Of Oxide Semiconductor Films Based On Protein Substrate

With the rapid development of social economy,people's purchase of electronic products is growing rapidly,and then electronic products are discarded after use,resulting in a large number of electronic waste,which has a great impact on the living environment.Therefore,it is of great significance to study the biodegradable electronic components for environmental protection.In addition,China's work on the preparation of oxide semiconductor materials on biomaterials is ongoing,but it is still in its infancy.The electronic components prepared on the biological substrate have the advantages of biodegradability and biocompatibility,which can be applied to biomedical sensors,implanted electronic systems,electronic skin,biochips,environmental monitors/sensors to be degraded,etc.It can be seen that the development of biodegradable and biocompatible electronic components has great development potential and application prospects.This paper focuses on the growth and utilization of oxide semiconductor materials based on corn protein substrate.Starting from the structure of the thin film transistor,through the preparation of Zn O film,silicon-based TZO film and TZO-TFT based on corn protein substrate,Hf O₂film based on corn protein substrate,respectively,we studied corn protein substrate,TZO channel layer,Hf O₂dielectric layer,which provided the experimental basis for the preparation of thin film transistor on corn egg white substrate.Finally,we used the mask cover method and succeeded TZO-TFT with switching characteristics was prepared on corn protein substrate.The main contents are as follows:1.Under the condition of room temperature,the corn protein film with smooth and flat surface was prepared.The Zn O film based on corn protein substrate was successfully prepared by magnetron sputtering equipment under different sputtering power.The influence of power on the structure,morphology and optical properties of Zn O film was studied by SEM,XRD,PL and UV spectrophotometer.The results show that with the increase of sputtering power,the crystal size increases,and the crystal quality of the thin film becomes better.When the sputtering power is 100 W,the crystal quality of the thin film is the best,and the crystal quality of the thin film will deteriorate and the crystal defects will increase.The average visible light transmittance is over 90%.2.At room temperature,TZO thin films and TZO-TFTs were prepared by magnetron sputtering and double target co sputtering at different Ar/O₂ratios.The effects of Ar/O₂ratio on the structure,morphology and optical properties of TZO thin films were studied by AFM,SEM,EDS,XRD and UV spectrophotometer.The results show that the change of Ar/O₂ratio will affect the doping amount of Sn and the crystal quality of TZO film.When Ar/O₂ratio is 95:5,the doping amount of Sn element is the highest,the roughness of the film is the lowest,and the average visible light transmittance of TZO film is more than 80%.The electrical properties of TZO-TFT are tested.When the Ar/O₂ratio is 95:5,the electrical properties of TFT are the best.The current switch ratio is 3.01×10⁶,the subthreshold swing is 0.615 v/dacade,the threshold voltage is only 0.7 V,and the field-effect mobility is 3.65cm²v^-1s^-1.3.At room temperature,Hf O₂dielectric layer based on corn protein substrate was prepared by magnetron sputtering equipment.SEM and AFM were used to study the influence of sputtering power on the surface morphology of Hf O₂on corn protein substrate.The results showed that when the sputtering power was 100 W,the surface roughness of Hf O₂dielectric film was the lowest,and the film was the most uniform and dense.4.At room temperature,the electronic properties of the device based on zein substrate TZO-TFT were tested by electron beam evaporation and magnetron sputtering.When the Hf O₂sputtering power was 100 W,the performance of the device based on zein substrate was the best,the current switch ratio(I_on/I_off)of the device was 1.35×10²,and the threshold voltage(V_th)was-1 V.