Study On The ZnO Based Transparent Conducting Substrate Material By Magnetron Sputtering Technique

ZnO is a kind of ??-V? semiconductor material, with wide band gap and high exciton 3.3e V at room temperature, the binding energy(60meV), also has high stability. Given its superior optical and electrical properties of ZnO and doped ZnO materials has been widely used in many fields of UV detectors, light emitting devices, solar cells, piezoelectric sensors, and a transparent conductive film light guide film. Especially on the ZnO-based transparent conductive film. Recently, it has attracted wide attention.There are many preparation of ZnO thin films, such as hydrothermal method, sol- gel, spray pyrolysis method, pulsed laser deposition method, magnetron sputtering method. The magnetron sputtering method has the advantages of low deposition temperature, fast speed, high purity, good adhesion, and simple preparation process, etc., so it has become an important means to prepare ZnO thin films. In this paper, by using RF magnetron sputtering method on glass substrate, ZnO thin films were prepared By changing the sputtering time, sputtering pressure, sputtering power, substrate temperature, annealing treatment and target substrate distance, the influence of six kinds of sputtering parameters on the properties of ZnO thin films were studied. X-ray diffraction method(XRD), scanning electron microscopy(SEM), ultraviolet visible spectrophotometer, four-probe tester, and step device were used to characterize and analyze the structure, morphology, thickness and photoelectric properties of the samples. The experimental results show that the ZnO thin films prepared by sputtering time 20 min, sputtering pressure 2.0Pa, sputtering power 125 W, the substrate temperature of 200?, annealing temperature 400?, ZnO films under conditions of target groups from 70 mm. The crystal structure of the crystal structure has obvious preferred orientation, the surface of the particles is large, compact and smooth, that is, the formation of a good crystalline quality of thin film; and the ZnO film thickness is moderate, and the transmittance of the film is more than 80%.As the ZnO films are widely used in the different devices, such as a window material, a transparent conductive electrode, optoelectronic integrated devices, etc., so that different substrate material impact on the properties of ZnO thin films prepared on the performance of each of the subject is worth studying. In this paper, different substrate materials(glass, PET, PI) on the same sputtering AZO films prepared using a detection method derived above, the light transmittance of the substrate material on the preparation of AZO three films rather, are can reach more than 80%, which AZO film on the substrate material prepared PI light transmittance in the visible range is not good. However, the sheet resistance of AZO thi n film on the substrate material prepared three prepared on PI AZO film is minimized. And by changing the sputtering power, sputtering pressure, substrate temperature, the three kinds of sputtering process parameters, to study their effect on the properties of AZO thin films on different flexible substrate. Results show that when the sputtering power is 100 W, 2.0Pa sputtering pressure and substrate temperature 100?, the preparation of AZO thin films on PET substrate, photoelectric performance good; When the sputtering power is 125 W, 3.0Pa sputtering pressure and substrate temperature 150?, the PI substrate preparation of AZO thin films, photoelectric performance is good.