Effect Of The Substrate Temperature And Sputtering Pressure And Buffer Layer On AZO Film

ZnO is a novel semiconductor material with wide direct band gap (3.37eV), Theexciton bound (60MeV) is higher than that of GaN material (21MeV), so it’s easier toimplement UV stimulated emission at room temperature.The lattice-matched substratematerial is easily to be found and the epitaxial growth temperature is low.In addition,ZnO has the strong film forming and good thermal and chemical stability, and thereforeit’s an important issue in the field of optoelectronic materials in recent years.In this paper, by using RF magnetron sputtering method, Aluminum-doped zincoxide (AZO) thin films are prepared by using a zinc oxide target doped withAl2O3(2wt%) on common floating glass. The effects of sputtering temperature,sputtering pressure and buffer layer on AZO thin films are investigated.The effect of temperature on the structure and optoelectronic properties of the films,they are investigated by changing the substrate. The experiment results show that: AZOfilms perform the best crystalline quality, the highest preferential c-axis orientation andtransmittance, and the lowest resistivity of3.91×10-3·cm under300℃.Under the different sputtering pressure conditions, the properties of AZO thin filmsare analyzed. We find that the film shows good preferential c-axis orientation, the bestfilm morphology structure and the lowest resistivity4.28×10-3·cm when the sputteringpressure is1.0Pa.AZO films with ZnO and Al2O3buffer layers are deposited. The influence on thefeature of AZO film with different buffer layers is analyzed. The experiment resultsshow that: the films which are prepared on buffer layers with higher XRD diffractionpeaks, better crystal quality and transmittance. The conductivity of the film is alsoimproved, and exhibits a lowest resistivity of5.8×10-4·cm when the film deposited onZnO buffer layer.