Research On ESD Protection Devices Based On 25nm Advanced Technology

Electro Static Discharge(ESD)has become one of the most important reliability problems in IC industry.With the CMOS technology scaling down gradually,the smaller devices cause more and more problems,such as thinner gate oxide layer,shallow junction,low protection current due to smaller area,parasitic capacitance and inductance and so on,which challenge the ESD protection device design based on the smaller CMOS technology,therefore in order to satisfy the requirement of the 5G and Io T,make the ESD protection device apply for the RF circuits,high speed I/O and wider BW,the future researching point is designing low triggering voltage and low parasitic capacitance ESD protection devices.Our work is based on the 25 nm CMOS technology ESD protection device design,three aspects about our work are following:(1)Including the ESD design window and full-chip protection network under the25 nm process,and introducing the basic ESD protection device characteristics.Perform tapeout,test and analysis verification of single devices,analyze the effects of different sizes on device performance,analyze the TLP test curves of basic devices,and analyze important parameters such as trigger voltage,sustain voltage,and secondary breakdown voltage and current.It provides ideas and directions for future optimization and application of basic devices as ESD protection design.(2)At the same time,the parasitic capacitance of commonly used ESD devices based on 25 nm process was tested and analyzed,and the influence trend of important dimensions of the device on the parasitic capacitance of the device was obtained,and the parasitic capacitance of different ESD devices was compared.The results showed that diodes and SCR devices with lower parasitic capacitance,it also provides an optimization method for low-capacitance ESD protection design under advanced technology in the future.(3)ESD protection based on radio frequency circuits is more explored.Commonly used single devices such as diodes and SCR devices are connected to the GSG PAD on the 25 nm scheme,and the RF characteristics are tested through the GSG pad.The S parameters of commonly used devices and the characteristic curve of input impedance with frequency are further analyzed,and the influence of the structure and layout of related devices on the radio frequency characteristics is further analyzed,and the radio frequency response characteristics of related devices are compared,which will provide protection for radio frequency ESD under advanced technology in the future.Down a solid foundation.