Research And Design Of SiGe BiCMOS Ultra-wideband Low Noise Amplifier

With the continuous development of semiconductor technology, the cut-off frequency of devices is increasingly high, which makes the performance of Monolithic Microwave Integrated Circuit using Si Ge process has become more and more close to those which using Ga As process. Si Ge process has a good noise performance, fast switching speed, high efficiency and easy to integrate, which makes it become a research hotspot and development trend. Ultra-Wideband Low Noise Amplifier as the first stage of Ultra-Wideband receiver system, whose performance is decisive to the performance of communication channel. So the research and design of a UWBLNA with good parameters, Noise Figure, input matching, gain and linearity is very important to the development of MMIC.This paper first introduces the research background of Ultra-Wideband Low Noise Amplifier, explains the module of Si Ge HBT, two port network, S parameters and noise analysis, Ultra-Wideband Technique, which includes the Si Ge HBT equivalent circuit, noise source and noise module, common tool smith chart, wideband matching and bandwidth expansion. Those provide a theoretical foundation and technical support for the following circuit design, layout optimization and results analysis.Then the paper explains in detail the performance parameters, the choose of circuit structure, design idea, the application and design of bias voltage and bandgap. Basing on these contents, A Ultra-Wideband Low Noise Amplifier using Jazz 0.18μm Si Ge Bi CMOS process is designed. A detail results analysis and comparison of the pre-simulation and post-simulation is carried out after finishing the analysis on circuit and layout optimization.Electromagnetic simulation and chip testing is introduced at last. Grasping the design key and difficulty of RFIC, the paper makes a theoretical and practical analysis of the test results, and propose methods to further optimize performance of the circuit. Basing on these analysis and comparision to similar research papers, the paper estimate the optimization space.With a good experience of the Si Ge Bi CMOS process, this paper introduces the design process and idea of Ultra-Wideband Low Noise Amplifier in detail, including much theoretical and practical analysis, and has a certain reference value for the same type of chip. The simulation results show that the LNA working frequency includes X-band and Ku-band, the noise figure is under 3.2d B, the power gain S21 is 19.8 to 20.7d B, 1d B compression point is-18.4d Bm, And the test results show that the chip achieves a the noise figure under 3.7d B, a power gain of more than 15 d B and relatively flat, S22<-13 d B, 1d B compression point of-18 d Bm, which means the circuit achieve the design goals.