Defect Types And Position Judgment Method Of Annular Through Silicon Via

With the continuous reduction of semiconductor process size,problems such as delay and energy consumption caused by the traditional integrated circuit interconnection have gradually become the bottleneck restricting the further development of semiconductor technology.In order to solve those problems,many solutions have been proposed.Among them,Three Dimensional Integrated Circuit(3D-IC)realizes vertical interconnection between upper and lower chips by means of Through-Silicon-Via(TSV),which has the advantages of small size,low power consumption,high interconnection density and heterogeneous integration.It is one of the most promising technical solutions.In practical application,due to the complexity of TSV processing technology,there will be filling holes,cracks and other defects due to different thermal expansion coefficient of materials and imperfect manufacturing process.Efficient and accurate defect detection is conducive to eliminating TSV defects,improving product yield.This paper mainly focuses on the nondestructive defect detection and location at Annular Through-Silicon-Vias(A-TSVs).The specific of this article is as follows:In chapter 2,the ground-signal-signal-ground(GSSG)TSV structure,Computer Simulation Technology(CST)is used to calculate the port voltage in time domain.By comparing the numerical values with that of no defects,the defects such as no defects,open defects and short defect between signal channels can be judged.In order to distinguish the short defect between signal and ground channels,the amplitudes of port voltage are summated to judge whether such defects exist.Furthermore,by analyzing the relationship between the port voltage and the defect position,the defect location method is obtained.In chapter 3,the differential signal is used as the excitation signal of GSSG type A-TSV,and the differential-and common-mode S-parameters are calculated by High Frequency Structure Simulator(HFSS)simulation software.By comparing the differential-and common-mode S-parameters of nondefective TSVs with that of defective ones,the characteristics of Sparameters with open defects,the short defect between signals and the short defect between signal and ground channels are obtained respectively.Then whether the defects exist and the types of defects are judged.In addition,the law of the differential-and common-mode S-parameters varying with the defect position is excavated,according to which the localization methods of defects are summarized.Compared with the single-ended signal,the short defect between signal and ground channels can be judged more clearly by using the differential signal.In chapter 4,the differential equivalent circuit model of GSSG A-TSV with horizontal metal interconnect is established,taking the effects of capacitance,resistance and inductance caused by open defects and short defects into consideration.The calculated results are in good agreement with the HFSS simulation results within 20 GHz.The differential-and commonmode S-parameters calculated by this model can be used to judge whether such defects exist and the types of short defects and open defects.