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Study On Thermal Resistance Test And Optimal Design Of SOP8 Power MOSFET Package

Posted on:2020-08-02Degree:MasterType:Thesis
Country:ChinaCandidate:Z H LiuFull Text:PDF
GTID:2518306503474204Subject:IC Engineering
Abstract/Summary:PDF Full Text Request
Power semiconductor device is an important part of integrated circuit,and it is the foundation of power electronic technology.Power MOSFET has become an important part of power semiconductor devices because of its fast switching speed,simple driving,low internal resistance and easy parallel connection.With the rapid development of consumer electronics and computer application,power MOSFET junction temperature with increasing power has become the bottleneck to power MOSFET application.Reducing thermal resistance is an important way to improve thermal performance and reduce junction temperature.In this paper,the test principle of the thermal resistance are expounded,and we tested the thermal resistance of junction to case and junction to ambient for SOP package.Finite element thermal simulation was used to analyze the factors affecting SOP8 thermal resistance.Based on the analysis,thermal resistance of SOP8 packaged MOSFET was improved.First of all,this paper mainly expounds the physical meaning and testing method of thermal resistance,and expounds the necessity and significance of thermal resistance test to the quality of power MOSFET.According to JESD51-1 and JESD51-2 standards,thermal resistance measurement of the SOP8 package was carried out.Subsequently,ANSYS Workbench with finite element method is used to model and simulate the junction to case thermal resistance for SOP8 encapsulated MOSFET devices.Through the comparison of the test results,the simulation results and the test value of thermal resistance,it can be seen that the thermal resistance error 4.46% is within the reasonable range,and the simulation results and the validity of the test system were verified.Secondly,the influence of SOP8 packaging layer material,package frame and chip size on the thermal resistance value of SOP8 package was studied.It was found that the bonding material with high thermal conductivity should be chosen as much as possible in order to reduce the thermal resistance of the package.When choosing a package framework,we should try to choose a framework with a larger LEAD FRAME.A larger chip size will reduce the package's thermal resistance.Finally,according to the above research results,the optimization of the thermal resistance value of the power MOSFET device in SOP8 packaging was simulated,produced and tested.We increased chip size and reduced the thickness of bonding material,used the molding material with high thermal conductivity.At the same time we selected the SOP8 frame with exposed PAD-Exposed Pad SOP8.The SOP8 with improved thermal resistance were simulated,the simulation results showed that the thermal resistance value was 47% of original thermal resistance and achieved the design objective.We produced samples and tested the thermal resistance,the sample test result was consistent with simulation result.The cost was basically the same.We believed that the MOSFET products with improved SOP8 package can improve the company's competitiveness,and reduce the power consumption of power MOSFET.At the same time,The improved package had great significance for energy saving.
Keywords/Search Tags:thermal resistance of package, power device, finite element simulation, thermal resistance test, junction temperature
PDF Full Text Request
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