The Cell Design And The Simulation Research On The Single-Event Burnout Of High-Voltage Silicon Carbide UMOSFET

Because silicon carbide power UMOSFET devices combine high performance and high reliability,in addition to being widely used in daily life scenarios,silicon carbide power UMOSFET devices are widely used in various military equipment and various aerospace equipment.When silicon carbide power UMOSFET devices are used in daily life scenarios,we require them to have low conduction losses.However,when silicon carbide power UMOSFET devices work in military and aerospace systems,we require silicon carbide power UMOSFET devices to have better radiation resistance.In response to the above requirements,based on the traditional silicon carbide power UMOSFET device structure,this article mainly carried out the following work:1.A silicon carbide power UMOSFET device structure with an electric field modulation area under the P-body region is proposed.Its characteristic is that there is an electric field modulation area under the P-body region.The electric field modulation area effectively reduces the peak electric field intensity at the bottom of the trench bottom of the silicon carbide power UMOSFET device,so that the reverse breakdown voltage of the device has been greatly increased(increased by about 25.2%).At the same time,the N-type region in the electric field modulation region also effectively reduces the characteristic on-resistance when the power device is turned on(a decrease of about 29%).Compared with the traditional silicon carbide power UMOSFET device structure,the figure of merit of the silicon carbide power UMOSFET device structure with an electric field modulation area under the P body region is increased by 120.5%.2.Through the simulation study of the silicon carbide power UMOSFET device with 2400 V reverse breakdown voltage,it is found that when studying the single-event burnout of high-voltage silicon carbide power devices,temperature should be used to measure whether the device is burnt out.3.A silicon carbide power device structure with a grounded P-body region and an N-type buffer layer is studied.Under the condition of a linear transmission energy density of 0.1p C/?m,the threshold of the device against single-event burnout has been increased from 900 V to 2130V(an increase of 136.7%).In addition,the improvement of the structure did not deteriorate the basic characteristics of the device...