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Research Of Mechanism And Experimental Methods Of Pulsed Laser Facility In Simulating Single Event Effects Of Digital Parts

Posted on:2012-12-25Degree:MasterType:Thesis
Country:ChinaCandidate:G S P ShangFull Text:PDF
GTID:2212330338469584Subject:Space physics
Abstract/Summary:
Digital device including SRAM, FLASH, FPGA, ASIC, PROM, EEPROM, CPU and so on are the most important parts of space electronic systems. As a whole part they can easily get, write, save datum. Space particle radiation environment can easily induce single event effects (SEE) so they can damage electronic system. As a result of semiconductor process is reducing into deep-micron, even super deep-micron, digital device are becoming more susceptible to out space environment. Among SEE, single event upset (SEU) and single event latch-up (SEL) are the most common and have been widely researched.To protect safety of space aircrafts, SEE characters of digital device should be researched and simulated on earth. First, this article look into mechanisms of pulsed laser single event effects (PLSEE) facility on SEE and put forward methods of how equal laser energy to LET, then introduce covering and multiple bites upset (MBU) problems of PLSEE and advantages of PLSEE in SEE test. SRAM, FPGA, ASIC have been put into practice of how to solve problems of PLSEE. By testing this device we got their threshold of SEU and SEL, cross section of SEU and their relationships with the configuration datum. Also discuss way of solving problems mentioned above of PLSEE and compare results with heavy ion tests. We learned times of SEL, micro-SEL and SEL'effects on SEU by using advantages of PLSEE.This article solved the problems of PLSEE and made use of its advantages. It has some useful references to SEE test of digital device.
Keywords/Search Tags:pulsed laser, digital device, single event upset, single event latch-up, micro single event latch-up
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