Research On Parameter Extraction Of IGBT Based On Chaos Particle Swarm Optimization

With the development of semiconductor technology,power semiconductor devices have high controllability and strong ability to convert power energy,so they are widely used in new energy sources such as energy conversion,wind power generation,and electric vehicles.And how to make the power system composed of power semiconductors in the power system can obtain higher power conversion efficiency and reduce the energy loss,thereby reducing the cost of the power system,which has become an important subject of modern power system research.In this subject,it is very important influence of the physical structure of the power semiconductor device and the parameter model for entire power system.Therefore,in the research of power electronic systems,understanding the physical structure of the power semiconductor device and its physical parameters can solve the power system.For example,reducing system power consumption,accurate experimental simulation,and reducing use costs.In this paper,the basic physical structure,its working principle and dynamic characteristics of IGBT are studied with insulated gate bipolar transistor(IGBT)as the research object,and on this basis,the carrier dynamics,charge distribution and physical model parameters affecting the dynamic process of IGBT are analyzed in detail.Based on Saber software and MATLAB as an auxiliary tool,combined with chaotic particle swarm optimization algorithm,the model parameters of IGBT are regarded as a function of IGBT dynamic waveform data.The IGBT experimental waveform data and simulation waveform data are compared and optimized.Finally the physical parameters of IGBT are successfully and effectively extracted.This paper studies and analyzes various characteristics of IGBTs in detail.Based on this,by analyzing the transient waveforms of the IGBT on-off process,the IGBT model parameters that affect the waveform are analyzed and studied,and the model parameters to be extracted are determined.Then use Saber to describe the advantages of IGBT's internal parameter model in detail,MATLAB can perform numerical analysis,matrix calculation,scientific data visualization,and modeling and simulation of nonlinear dynamic systems,and AIM programmed language can establish a joint channel between Saber software and MATLAB.The chaotic particle swarm optimization algorithm is used to achieve the simulation optimization effect.The joint simulation of Saber and MATLAB is formed to form a joint simulation platform.After that,the data obtained from the experimental platform is imported into the joint simulation platform for parameter extraction,and the SGL160N60 UFD IGBT parameter extraction was successfully completed.Finally,in order to verify the validity of the parameter extraction method,theconduction waveform of IGBT with resistance load and the conduction-off waveform with resistance load are verified in this paper.The verified results show that the method can effectively extract the model parameters of IGBT.