Development And Application Of High Power IGBT Module Dynamic Switching Performance Test Platform

Switching characteristics of high power IGBT module play a significant role in the device selection, power losses estimation and electro-thermal stress analysis of power electric converters in real operating conditions. And the chip temperature extraction of high power IGBT module conduces to IGBT condition monitoring, achieving its health management. An optimized converter structure and cooling system can be accomplished with a combination of device test and chip temperature management. Also, device test results can provide data to improve reliability of the whole power electronics system. In this paper, high-power IGBT modules switching characteristics automated testing and extraction system is built with consideration of device dynamic characteristics test and chip temperature extraction, and an effective chip temperature monitoring method based on turn off delay time is introduced and verified on this test bench.In terms of IGBT module switching characteristics testing and extraction, considering the industrial application of high-power IGBT modules, this paper makes a flexible design of high power IGBT modules test system, aiming at 3300V high power IGBTs, which are employed in VSC-HVDC systems. With a simulation of device operating conditions, high power dynamic performance can be evaluated by testing system. Based on the platform of LabVIEW, the automatic system testing is implemented with modularized design concept, the remote control and data display of the test bench are achieved and a simple and user-friendly interface is designed. Meanwhile, the extraction and trend analysis with operating conditions of switching characteristic parameters, like the switching losses and the switching time, are accomplished on MATLAB via the dynamic waveforms of switches.In terms of IGBT module chip temperature extraction, the characteristics of high-power IGBT module package is fully analyzed and the turn off delay time chosen as temperature sensitive electric parameter(TSEP), is extracted through the module parasitic inductor, which can be further used to estimate chip temperature variation of high power IGBT module. The junction temperature extraction method based on turn-off delay time is verified by high-power IGBT module switching characteristics test system. This method features good linearity, high definition, convenience of test and ease of integration, which has extensive application prospect on the study of reliability, such as the online monitoring of IGBT module junction temperature.Finally, a conclusion is summarized and future plan of high-power IGBT operating characteristics testing and application of chip temperature measurement with temperature sensitive electric parameters is drawn up at the last section of this paper.