The Electrical Model And Parameter Extraction For NPT IGBT

With the higher and higher requirement on electrical conversion and process for both civil and military use, saving energy and exploiting new energy sources, the semiconductor devices, cored in electric transform facilities, plays a more important role. The power Insulated Gate Bipolar Transistor (IGBT), combining the advantages of easy drive of MOSFET and high current density of Power BJT and taking on a good comprehensive performance, is the controllable power electronic device generally applied in the current domestic industry.The IGBT model, as an important assistance for the device development and application, has been a hot research object. The precise IGBT model can predict the steady-state and transient electrical behavior of IGBT, so that it can save the electrical engineers plenty of time and cost. Hence, it is of important significance for research into modeling IGBT.This paper mainly studies the NPT IGBT, and analyses the operation principle of this kind of IGBT. Based on the semiconductor physics, the paper provides a detailed theoretical deduce procedure for the steady-state and turn-off transient models presented by Hefner. According to the turn-off transient physical mechanics of IGBT, the transient model forementioned is made some modification.The parameter extraction procedure provided for IGBT model, proposed by Hefner, is so complex that it is not practical for the electrical engineers. This paper adopts a simplified extraction method of that proposed by Hefner for the parameterτ_HL, and some empirical equations and the datasheets provided by the device manufacturers to extract most of other parameters.Finally, the experiment verifies that the IGBT model is accurate, which can predict the steady-state and the turn-off transient behaviors of IGBT.