Design Of 6500V IGBT With Research On Dynamic Characteristics

The insulated gate bipolar transistor(IGBT) have high blocking voltage, low forward voltage drop, faster speed of turn-off and lower turn-off lose. These characteristic make it an ideal power switches. With the great development of new energy and transportation, the manufacturing technology of IGBT in china have been perfected. We report a process design of a 6500 V FS-IGBT in the paper. A specific study in performance is provided, especially the dynamic characteristics. The detail innovations of this thesis are listed below.Firstly, This paper summarizes all the structure and technology of IGBT and put forward a kind of 6500 V IGBT with high realization of design plan and the corresponding process flow.Secondly, with the simulation tools, we design the basic blocking characteristic which is demanded. After these work is done, we are ready for next tape-out.Thirdly, the influence of process parameters on the device performance is analyzed in detail. The parameters include P-well dose, JFET dose, the length of gate effect on the device static performance. The parameters include N-buffer does, P-back dose, minority carrier life time effect on the device dynamic performance. The figure of merit in simulation can provide a guidance for next tape-out.