Research And Implementation Of Key Technologies For Radiation-hard Power Integrated Circuits

Power integrated circuits are the energy heart and power source of circuit systems,and have important application value in radiation environments such as aerospace,nuclear physics experiments,and nuclear medicine.Therefore,it is necessary to strengthen the radiation-hard ability of power IC.Based on the radiation mechanism,focusing on power IC,standard device with enclosed gate technology,key leakage current compensation technology,negative voltage reinforcement technology and other universal technologies are proposed in this paper.Moreover,related IC chips are designed and exposed in ⁶⁰Co radiation enviroment.The equivalent aspect ratio model of the track-track enclosed gate device is derived in this paper and verified by TCAD.According to the simulation results,the fitting accuracy of the calculation model is more than 70%.Compared with the conventional straight-gate device,the race-track device shows significant radiation-hard ability at a simulation dose of 1Mrad?SiO₂?.In addition,the relationship between model parameters and calculation accuracy is also studied in this paper.The calculation accuracy of the model can be achieved more than 95%with smaller channel length,larger radius of drain region,and larger straight gate length.Standard device with enclosed gate technology analyzes and studies electrical parameters such as parasitic capacitance,layout area,minimum aspect ratio of several different structures of enclosed gate devices,and the method that building an enclosed gate library based on standard processes is proposed.Regarding the full MOS technology,the characteristics of the lower threshold voltage of the dynamic threshold MOS?DTMOS?device is clarified.Moreover,voltage reference and pre-regulation circuit are designed with DTMOS.Total ionizing dose detecting circuit is first proposed in the paper.Based on this circuit,key leakage current compensation technology is proposed and applied to the design of radiation-hard oscillator.Negative voltage reinforcement technology for key modules is also proposed,and related IC chip is designed and tested in this paper.Based on the 0.18?m BCD process,the radiation-hard performance of enclosed gate devices and circuits has been verified by ⁶⁰Co irradiation experiments.The leakage drain current of brocken corner device at 300krad?SiO₂?is half of conventional straight gate device?1.8V device?.For 5V devices,the off-state leakage current of the brocken corner device at 100k³00krad?SiO₂?is about 10^-710^-6 ampere,while the leakage current of the straight gate device is about 10^-5 ampere.At 200krad?SiO₂?,the leakage current of the power MOS with race-track structure is 10^-10 ampere,while the leakage current of the straight gate device is about 10^-2 ampere.At 300krad?SiO₂?the output deviation of the enclosed layout pre-regulation circuit is 20mV(V_in=3V),while the output deviation of the straight gate layout is 40mV.The test results of the negative voltage reinforced chip are also analyzed in this paper.The output square wave signals can be set as-2.5².5V,-1.8².5V.