Research And Design Of Silicon-based Milimeter Wave Low Noise Amplifier

In recent years,the development of silicon-based processes has laid the foundation for the development of RF millimeter-wave integrated circuits toward low cost and high integration.The deployment of 4G and 5G have attracted a large number of talents,and also injected fresh blood into integrated circuit industry in China.As a hardware core in a communication system,the radio frequency transceiver has an architecture that affects the function and performance of the entire system.As the first stage amplifier circuit of the receiver,the low noise amplifier takes into account both the amplification of weak signals and the need to reduce the impact of its own noise on the sub-stage circuits.Its performance will affect the sensitivity and noise figure of the entire receiving link.Due to the advancement of silicon-based process technology,the noise performance and cutoff frequency of transistor have been greatly improved,and it is able to meet the needs of RF mm-wave development.Therefore,research and design of mm-wave low-noise amplifiers based on Si-based processes is also of great significance.The introduction of this article will explain the research background and significance of low-noise amplifiers based on silicon technology,and summarize the art of state at home and abroad.The theory chapter introduces and analyzes passive devices and active devices,and explains the theory of two-port network analysis.Then the design basis of low-noise amplifiers will be introduced,including performance,design principles,and traditional structure.Analysis of innovation structures also will be illustrated.First,a 77 GHz low-noise amplifier introduced in this article is designed and taped out based on a 130 nm SiGe BiCMOS process.The amplifier consists of a three-level cascode circuit,and its main purpose is to obtain higher gain and lower noise figure in the 76-81 GHz frequency band.Because the temperature fluctuation with the gain should be lower than a limited value in the design requirements.Then a temperature compensation method is adopted in the design of the bias circuit.The input and output matching are designed with broadband to achieve good performance of reflection.Second,a W-band low noise amplifier is designed and taped out based on 65 nm CMOS process.This amplifier ultilize a three-level cascode circuit based on a Gmboosting transformer.Compared with the traditional cascode structure,the amplifier has reduced the difficulty of matching,and the performance of gain and noise is obviously improved in the W-band.After further optimization,the stability has also been improved.Finally,a broadband low noise amplifier working in the 5G band is designed and taped out based on 65 nm CMOS process.The amplifier operates from 21 to 41 GHz.It consists of two-stage common source structure and a single-ended folded-cascode stage based on a triple-coupled transformer,covering all key frequency bands of 5G.The measured gain and noise performance show a good result.