The Study And Design Of Radiation-hardened SRAM

With the improvement of integrated circuit technology,radiation effects on electronic chips is becoming more and more serious and new requirements of radiationhardened design are also put forward.Static random access memory(SRAM)plays an important role in the integrated circuit as a cache.However,it is extremely susceptible to radiation effects in the radiation environment as a result of its sensitivity on radiation effects and high area proportion,usually more than 70% on SOC(system on chip),and the effect is exacerbated by integrated circuit technological advances.Therefore,radiation-hardened demands of SRAM have been changing with the improvement of integrated circuit technology.Based on the basic devices and units,this paper discusses the performance problems and performance optimization methods in digital circuit design.At the same time,the influence of the radiation effect on the integrated circuit and the influence of the radiation effect on the improvement of the integrated technology are also analyzed.The conclusion is that under the 130 nm SOI process,TID and SEU are the two most important effects on SRAM.A TID-hard and SEE-hard SRAM based on 130 nm commercial process with the capacity 0f 8Kx8 bits is designed via full-custom-design after a thorough study of SEE,TID and digital integrated circuit design technology.In this paper,the anti-radiation performance of DICE unit is studied in detail,and a new rad-hard storage unit is designed to reinforce the failure of DICE during the read and write operation.The rad-hard storage unit put forward in this paper is reinforced with a body bias isolation tube and still has good resistance to radiation during read and write operation.And the design dimension of the unit is given by theoretical analysis.On the basis of the rad-hard storage unit,this paper designs the corresponding external circuit of SRAM,and makes the rad-hard design of the pre-charge unit and the sensitive amplify unit.