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The Research Of The Irradiation Of Non-volatile Semiconductor Failure Mechanism And Radiation-hardened Reinforcement

Posted on:2015-02-26Degree:MasterType:Thesis
Country:ChinaCandidate:X M ZhangFull Text:PDF
GTID:2308330464955316Subject:Integrated circuit engineering
Abstract/Summary:PDF Full Text Request
Along with the advance of China’s space technology, the exploration of outer space is more and more frequent. In outer space in the presence of large amounts of space radiation, the radiation of running in aerospace components, such as satellite has fatal effect, can lead to device failure, these devices in the integrated circuit products are more sensitive to radiation environment. As people deepen the understanding of space radiation environment, how to improve the radiation resistance of integrated circuit, also became the focus of the national research field, the study by irradiation of semiconductor memory failure mechanism and corresponding radiation-hardened reinforcement technique as the key point, this paper systemic summarized the radiation environment and the radiation effect.Semiconductor memory is divided into two categories, volatile and non-volatile memory storage, including non-volatile semiconductor memory data is not lost in case of power cuts, commonly used to store the large capacity of data. Non-volatile memory block in EEPROM and FLASH the most widely used two kinds of memory, the work of this paper is mainly about the FLASH memory research.Irradiation of non-volatile semiconductor memory failure types are mainly single particle failure, total dose and dose rate failure such as several major categories.This paper analyzes in detail all kinds of failure, the inner mechanism of irradiation on the basis of analysis of failure mechanism, study the various radiation-hardened reinforcement technology, there are two main types of design reinforcement and reinforcement technology.After irradiation failure mechanism and irradiation resistance based on the research of reinforcement technology, this article adopts the method of design reinforcement designed a FLASH device capable of radiation-hardened and irradiation experiment was carried out.Through the analysis of the FLASH device irradiation test data, to verify the effectiveness of the adopted radiation-hardened reinforcement technology can effectively improve the radiation resistance of the device.To further improve the radiation resistance of the device, this paper puts forward the integrated design and process of radiation-hardened reinforcement method, for the follow-up work of another starting point.
Keywords/Search Tags:Radiation Effect, Single Event Effects, Total Ionizing Dose, Radiation Hardeness, Semiconductor memory
PDF Full Text Request
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