Preparation Of Copper Phthalocyanine Organic Thin Film Transistor And Its Dynamic Photoelectric Characteristics

In this thesis,thin film diodes with Cu/Cu Pc/Al structure and thin film transistors with Cu/Cu Pc/Al/Cu Pc/Cu structure are fabricated by vacuum evaporation and magnetron sputtering techniques.The electrical and optical properties of the fabricated device are tested respectively.Through calculating the physical parameters of the device,the photoelectric conversion capability and photoelectric response speed of the device are explored.The switching characteristic principle of the device under dynamic illumination is analyzed,so as to explore the possibility of practical application of the device.Firstly,the output characteristic and photoelectric characteristic of copper phthalocyanine organic thin film diode are tested.The results show that the device has good rectification characteristic.The optical parameters of the device are calculated,such as filling factor FF and photoelectric energy conversion efficiency.The aging mechanism of the device is analyzed.Secondly,the static output characteristic of Cu Pc organic thin film transistor?Cu Pc TFT?is tested.The test results show that the gate Al forms good Schottky contact with the upper and lower Cu Pc layers.The output characteristic shows unsaturated characteristic.Under the conditions that the gate-source voltage is0V(V_GS=0V)and the drain-source voltage is 3V(V_DS=3V),the calculated output current density is 2.25A/m².According to the formula,the carrier concentration N_Pof the device is 3.46?10¹⁵/cm³,and the conductivity is 2.25?10^-9S/cm and the mobility is 4.06?10^-6cm²/Vs.The transistor characteristic parameters including transconductance gm,threshold voltage,output resistance r _Dand amplification factor?are calculated.Then,the photoelectric characteristic of Cu Pc organic thin film transistor is measured.The experimental results show that Cu Pc TFT has good photoelectric sensitivity.When the drain-source voltage is 3V,the photoelectric sensitivity reaches0.0125A/W.Under light conditions,the current amplification ratio of Cu Pc TFT is1.17-1.33 times.The photosensitive mechanism of the organic transistor is analyzed,and the schottky contact barrier height is reduced by 14me V after illumination.The threshold voltage is reduced by about 0.2V after illumination.200 Hz dynamic illumination is applied to Cu Pc organic thin film transistors.Experiments show that the on-time is 1.5ms and the off-time is 1.8 ms.The time response of the transistor shows a fast switching behavior.The switching time reaches millisecond level,which shows that the Cu Pc TFT has a very fast responsing speed.The aging characteristic of the device is tested,and the device has a certain stability in five days without packaging.