The Fabrication And Photoelectric Characteristics Analysis Of ZnPc Organic Thin Film Transistor

Organic thin film transistors have the advantages of simple preparation process,low cost and compatibility with flexible substrates.It has been a hot research direction.It has a very important application prospect in active display,sensor and logic circuit.Conventional organic thin film transistors with horizontal structure have some shortcomings,such as long conductive channel,high driving voltage and small operating current.In order to solve these shortcomings,we try to use the vertical structure of organic thin film transistors,because the conductive channel of vertical structure is short,it can effectively reduce the driving voltage and improve the operating current of the devices.In this experiment,we using photosensitive of material zinc phthalocyanine as the organic thin film transistors active layer.According to the theory of metal-semiconductor contact,we select these materials as the electrode of transistors,which work function match with zinc phthalocyanine semiconductor material.We prepared ITO/ZnPc/Al thin film diode and ITO/ZnPc/Al/ZnPc/Cu thin film transistor by vacuum evaporation and magnetron sputtering.First of all,measurement and analysis the characteristics of zinc phthalocyanine organic thin film diode.The experiment proves the device has obvious good photovoltaic response characteristics.In the backward region,photocurrent amplification factor is bigger than it in positive area.Obviously,ZnPc material can improve the performance of the photoelectric diode,such as enhance the fill factor and the energy conversion efficiency.Then,measurement and analysis the characteristics of zinc phthalocyanine organic thin film transistor.We should make sure if there are good Schottky barrier between A1 electrode and both sides of ZnPc.Then we measured the electrical and optical characteristics of zinc phthalocyanine organic thin film transistor.We should study that which is more suitable for ITO and Cu to do the emitter of thin film transistor.According to the experimental results,the amplification rate of transistor,current amplification factor,photocurrent and photoelectric sensitivity can be calculated.The experiment results prove that ZnPc organic thin film transistor has good capability of photoelectric conversion and high photoelectric sensitivity.When Vec=2V,the photoelectric sensitivity is more than 2AAV.The output characteristics of the thin film transistors in different light are measured,and the current amplification effect is best when using 700nm.At the same time,the change of the time characteristic of the device was tested,and the stability of the device was stable in six days.