Preparation And Characterization Of Organic Thin Film Transistors Co Deposited With Magnesium Phthalocyanine-lead Phthalocyanine

Magnesium phthalocyanine（MgPc）thin film diodes,lead phthalocyanine（PbPc）thin film diodes,and PbPc and MgPc/copper phthalocyanine（Cu Pc）/zinc phthalocyanine with vertical structures were prepared by vacuum evaporation and magnetron sputtering processes（Zn Pc）were respectively co-deposited as the active layer of the thin film diode,based on which the MgPc/PbPc co-deposited thin film transistor was prepared.By adjusting the different mixing ratios of MgPc and PbPc,organic thin film transistors with PbPc and MgPc/Cu Pc/Zn Pc were co-deposited with a deposition ratio of 1:1 were prepared.Phthalocyanine co deposited films can maintain their original excellent properties and enhance their photoelectric properties by using special molecular stacking methods and structures.Different from the two-dimensional structure of other metal phthalocyanines,the addition of three-dimensional lead phthalocyanine promotes orbital hybridization and further improves the performance of organic devices.Hybrid organic thin film transistors have a wider range of visible light absorption,which can increase visible light absorption.At the same time,the vertical organic thin film transistor is composed of vertically stacked source/drain electrodes.Due to its inherent small channel length and unique operating principle,in principle,it can easily provide high current density and operating frequency under low operating voltage,thus ensuring its huge practical application in organic electronics.This paper mainly analyzes the organic thin film diodes and organic thin film transistors in which the mixture ratio of magnesium phthalocyanine and lead phthalocyanine is co-deposited as the active layer at 1:1.The electrical characteristics and optical tests were carried out on the diode device with Cu/MgPc_0.5-PbPc_0.5/Al three-layer vertical structure.The AC characteristics,photoelectric characteristics and capacitance-voltage characteristics of organic thin film diodes were tested.A Schottky contact is formed between the Al electrode and the MgPc_0.5-PbPc_0.5film,and the MgPc_0.5-PbPc_0.5diode has good rectification characteristics.Finally,a C-V characteristic analysis was also performed to further analyze the optical parameters of the diode under 1/C²-V calculated illumination.The organic thin film transistor with Cu/MgPc_0.5-PbPc_0.5/Al/MgPc_0.5-PbPc_0.5/Cu five-layer vertical structure was analyzed,and it was found that the output curve of the organic thin film transistor showed an unsaturated characteristic.Compared with Zn Pc_0.5-PbPc_0.5,Cu Pc_0.5-PbPc_0.5,and MgPc_0.5-PbPc_0.5organic thin film transistors,parameters such as transconductance gm,magnificationμ,conductivityσand carrier mobility were calculated.Through experiments,it is found that the MgPc_0.5-PbPc_0.5organic thin film transistor has the largest switching ratio under the condition of no light,and the output current of the MgPc_0.5-PbPc_0.5organic thin film transistor is larger under the same input voltage.MgPc_0.5-PbPc_0.5organic thin film transistor has the best performance,however,under the condition of light,the absorption rate of Zn Pc_0.5-PbPc_0.5material is the largest,and the photogenerated current is also the largest.Therefore,under light,the Zn Pc_0.5-PbPc_0.5organic thin film transistor has better characteristics.The research in this paper provides conclusions and prospects for the further development of co-deposited organic thin film transistors,and accelerates its application in the field of electronics.