The Fabrication And Photoelectric Characteristics Research Of ZnPc/CuPc Hybrid Film Transistor

Organic thin film transistor due to its light weight,simple preparation process and compatibility with flexible substrates,has been widely used in organic optoelectronic field,such as integrated circuits,flat panel display and light sensors and other important areas.In this paper,ZnPc and CuPc mixtures with high carrier mobility and low intrinsic conductivity are selected as organic semiconductor materials;high work function Cu as drain electrode material;low work function AI as gate electrode material;in this experiment,we need to measure the photoelectric characteristics of organic thin film transistor,the source electrode material needs the material with good light transmittance,so we select ITO as the source electrode.The organic thin film transistor device is fabricated by vertical structure,which can effectively shorten the length of the conductive channel,thereby reducing the driving voltage and improving the working current of the device.This experiment uses the OLED multi-function coating system,ZnPc/CuPc hybrid films were prepared by vacuum evaporation,and Cu,AI,ITO thin films were prepared by magnetron sputtering.organic thin film transistor with Cu/ZnPc/CuPc hybrid film/Al ZnPc/CuPc hybrid film/ITO five-layer vertical structure was prepared.The electrical characteristics of the device were then tested using the 4200-SCS Keithley semiconductor tester.First,test the Schottky barrier properties of CuPc and ZnPc hybrid and Al gate,the results show that the formation of Schottky contact with the Al gate and CuPc and ZnPc hybrid is superior to the rectifier characteristics.Then,test and analyze the electrical characteristics of ZnPc and CuPc hybrid film transistors.The ZnPc and CuPc hybrid film transistors static characteristic curve showed that when gate voltage is fixed,the working current increases with the increase of the source drain voltage,and had an obvious unsaturated characteristics;transfer characteristic curve shows that when the source drain voltage is fixed,the working current decreases with the increase of gate voltage,indicating the gate voltage significantly inhibited the current work.According to the absorption spectra of CuPc and ZnPc hybrid membrane,using 335nm,625nm and 700nm wavelength light irradiate the transistor,the transistor current is significantly enlarged.According to the experimental results,it is concluded that the transistor amplifier rate,the photocurrent and the photoelectric sensitivity.The experimental results show that the CuPc and ZnPc hybrid thin film transistors have high photoelectric sensitivity.Among them,the photoelectric sensitivity was highest at the of 625nm wavelength light.Finally,compared with the performance parameters of ZnPc thin film transistor and CuPc film transistor,it is indicated that the ZnPc and CuPc hybrid thin film transistors have the advantages of ZnPc and CuPc two kinds of organic materials,and have high sensitivity to multiple wavelength light.