Photoelectric Characteristics Of Cobalt Phthalocyanine Thin Film Diode

Organic devices in the field of display-driven success,has proved its great potential in industrial production.CoPc semiconductor materials have excellent optical and electrical properties.When the optical signal is irradiated by the device,the exciton is generated,and the photo-generated current is separated by the built-in electric field under the Schottky barrier contact between the semiconductor material and the metal material.In order to study the photovoltaic properties of the novel organic photosensitive material cobalt phthalocyanine(CoPc),the characteristics of thin film diodes with ITO/CoPcAl structure were studied.Based on the theory of metal/semiconductor contact characteristics of CoPc thin film diode analytical preparation,organic film CoPc respectively with ITO and Al films to form ohmic contact and Schottky contact,CoPc organic thin film diode preparation is Schottky barrier diode.Compared with the traditional inorganic PN junction diode,Schottky diode is a multidevice with low forward voltage,while the organic Schottky diode is a simple structure of organic semiconductor devices,but the study is still of practical significance,because the photovoltaic properties of Schottky barrier diode has,so that it can be used to make photovoltaic and photoelectric sensor.Firstly,thin film diodes with structure of ITO/CoPc/Al were fabricated by vacuum evaporation process and magnetron sputtering process.The evaporation parameters of organic thin films were changed on the basis of other phthalocyanine compounds,and the temperature and time were changed several times.Finally,the optimal parameters were determined,that is,the temperature was 350? and the deposition time was 2h.Then,the photovoltaic properties of the phthalocyanine thin film diodes were measured and analyzed.The device is illuminated and has a significant PV response characteristic,which is very significant in the reverse region.The results show that the filling factor FF is 0.48 and the photoelectric conversion efficiency is 0.21%.Finally,the similarity absorption intensity and similar wavelength are obtained by analyzing the test results and observing the ?characteristic curve of the cobalt phthalocyanine thin film diode.Light irradiation devices,analysis of the main factors affecting the device.The light-emitting devices were measured at 323nm and 350nm,respectively,and the filling factor FF was 0.21 and 0.11,respectively.The light-absorbing devices with similar absorption intensities at 450nm and 500nm yielded the filling factor FF of 0.17 and 0.16,respectively.Analysis of data available,when the wavelength is similar,the greater the intensity of absorption of light,the greater the filling factor;when the absorption intensity is similar,the smaller the wavelength of light,the smaller the filling factor?...