Design Of Millimeter Wave Amplifier And Attenuator

With the continuous improvement of wireless communication technology,the requirements for millimeter wave devices are becoming more and more demanding,and people need to constantly explore and research higher frequency band millimeter wave devices to meet the needs of wireless communication technologies.At present,how to realize the low-cost,low-power,high-integration communication system using CMOS technology is still one of the hot research directions in the field of integrated circuits.Millimeter wave amplifiers and attenuators are important modules in communication systems,and their research has also been given high attention.Firstly,this thesis summarizes and analyzes the current research status of millimeter wave amplifiers and attenuator at home and abroad,and comparative analysis of the implementation structure of these two circuits and their advantages and disadvantages.This provides a solution for the design of the circuit structure.Secondly,the structural characteristics and implementation methods of on-chip inductors balun and other passive components used in circuit design are introduced.The model parameters of active devices are briefly analyzed to provide a basis for circuit implementation.Then,two millimeter-wave amplifiers were designed on the 65 nm CMOS technology.Both amplifier circuits used two balanced structures.Because the characteristic frequency of the 65 nm CMOS technology is 140 GHz,and the designed amplifier's operating frequency band exceeds the characteristic frequency,feedback is made between the gate and drain of the transistor to make a Gmax-core to increase the maximum usable gain in the high frequency band.The first amplifier circuit designed was a millimeter-wave amplifier with a center frequency of 223 GHz.Simulation results showed that the amplifier had a gain of 15.7d B,a bandwidth of 5GHz,and a chip area of 0.33mm2(including PAD).The second is a millimeter-wave broadband amplifier,which uses a technology similar to staggered tuning to achieve broadband with distributed center frequencies for interstage matching.Simulation results show that the gain of the circuit is 9.3d B,the working frequency band is 196 ?235 GHz,the bandwidth is 39 GHz,and the chip area is 0.35mm2.One of the two amplifiers that was finally implemented has a high gain and the other has a wide bandwidth.Finally,a 20?30GHz attenuator was designed in 0.18?m CMOS technology.Theattenuator adopts a three-stage distributed structure,and using the switching characteristics of MOS transistors as adjustable resistors,and the adjustable resistors are separated by ? /4 transmission lines.The simulation performance of the attenuator is 21 d B attenuation,3d B attenuation step,and chip area of 0.304mm2(including PAD).This thesis designs a millimeter wave amplifier and attenuator.The two circuits are designed based on GF 65 nm CMOS technology and CSMC 0.18?m CMOS technology.The simulation performance of the circuits have reached the expected index.