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Design And Research Of Millimeter Wave Amplitude And Phase Control Module Based On CMOS Technology

Posted on:2022-02-14Degree:MasterType:Thesis
Country:ChinaCandidate:X ZengFull Text:PDF
GTID:2518306524985719Subject:Master of Engineering
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With the rapid development of wireless technology,research on millimeter wave technology for 5G applications has become more widespread and popular.In order to meet the high data transmission rate requirements of 5G and even 6G communication systems,the millimeter wave communication system should have the ability to realize beam forming and scanning,so the millimeter wave phased array system is considered to be the next generation communication system.The design and research of millimeter wave amplitude and phase control modules based on CMOS technology has great academic value and potential market value for improving the performance of millimeter wave circuits,reducing system costs,and promoting the development and application of civil millimeter wave phased array systems.This thesis will conduct an in-depth study on the amplitude and phase control module in the millimeter wave phased array system,hoping to play a certain role in improving the performance of the RF front-end chip.First,this thesis introduces the basic knowledge of the phased array system,and then introduces the amplitude and phase control module,that is,the phase shifter and attenuator,as the core module in the phased array system,which plays a vital role.Then introduced the basic principles,circuit structure,performance indicators,classification and other basic knowledge of phase shifters and attenuators,analyzed the advantages and disadvantages of active and passive structures and the scope of application according to the circuit principles,and laid a foundation for the design explanation of the later circuit basis.Then,starting from the small signal model of CMOS transistors,how to select the appropriate size when CMOS transistors are used as switch tubes is analyzed.Therefore,a 6-bit passive phase shifter that uses 65 nm CMOS technology and works in the W-band is designed,with a total of 64 states,and achieves a 360° phase shift with 5.625° steps.The phase shifter simulation realizes that in the 90-100 GHz frequency band,the rms phase error of the phase shifter is less than 3,and the rms amplitude error is less than1.4dB,and the phase shift of the W band is realized.After analyzing the inherent additional phase shift of traditional passive pai-type and T-type attenuators due to parasitic effects,a structure with tail capacitance compensation and additional phase shift is adopted,and a W-band continuous frequency modulation wave radar is designed.Source attenuator,the step is 2dB,the maximum attenuation range is 12 dB,a total of 8 working states.The final test shows that in the90-100 GHz frequency band,the rms phase error of the attenuator is less than 3°,and the rms amplitude error is less than 1.4dB,which verifies that the tail capacitance can also compensate for the additional phase shift in the higher frequency band.Finally,in the 26 GHz communication system,a 65 nm CMOS process is used to design an ultra-wideband active phase shifter.The working frequency band is16-26 GHz,the relative bandwidth is 46.7%,the phase shift range is 360°,and the phase shift step is 5.625°,a total of 64 working states.In the test results,in the working frequency band,the root mean square phase error of the phase shifter is less than 3°,and the root mean square amplitude error is less than 1.4dB,which realizes the ultra-wideband local oscillator phase shift.
Keywords/Search Tags:Millimeter wave, CMOS process, phased array, phase shifter, attenuator
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