Research And Design Of Multi-value Hysteresis Circuit Based On NDR Characteristics

Resonant Tunneling Diode RTD is a quantum device fabricated based on resonant tunneling effect.It is widely used in many research fields such as logic circuits,oscillators and memories with advantages of high-frequency,high-speed and negative internal resistance performancesfirstly,the characteristic curve and equivalent network generated by the resonant tunneling diode RTD were investigated.Additionally,based on the binary hysteresis switching unit and the hysteresis characteristics of the RTD,multi-value hysteresis element circuit with hysteresis characteristics by the differential NDR equivalent network of RTD was constructed.Finally,it was verified that the circuit could successfully complete the conversion between the various resistance states under the periodic signal excitation by software simulation,analyze the influence of the device parameters on the characteristic curve.The multi-value hysteresis unit circuit built in this paper has adjustable high,medium and low resistance states and multi-threshold voltage performances,which is very suitable for the design of multi-valued logic circuits.The output characteristic curve of the multi-valued hysteresis unit circuit is similar to the hysteresis loop curve of the memristor.In order to improve the switching unit circuit based on RTD,the symmetrical structure was added on the basis of the original circuit.This paper proposed a bipolar multi-value memristor model based on NDR negative resistance.The equivalent network simulation of RTD was used to obtain a multi-value memristor characteristic curve with multi-resistance state,by changing the NDR negative resistance network parameters,In order to make the designed multi-valued memristor model closer to the ideal model,this paper provided an improved memristor circuit structure.More importantly,a hardware circuit was built to test the R-HBT-NDR multi-value memristor model to verify the correctness of the design.Compared with the ideal ternary memristor circuit model,the NDR-based multi-valued memristor has the characteristics of adjustable threshold and controllable multi-resistance.Finally,this paper introduced traditional quantizer and improved quantizer.On this basis,according to the multi-value hysteresis unit circuit under different input voltage control,the output curve has multiple resistance states and other characteristics.This paper proposed a new three-value quantizer circuit.The design of the multi-value hysteresis unit circuit not only enriches the basic types of RTD circuits,but also broadens the application field of multi-valued logic.In addition,it provided a theoretical basis for the cross-study application of multi-valued differential negative resistance circuits and multi-valued memristor circuits.