Research Of Resonant Tunneling Diode On GaAs Substrate

Resonant Tunneling diode is a new type of negative differential resistance device with two terminals, with two characteristics of high speed and bistable state. RTD utilizes the resonant tunneling transport mechanism that allows picosecond device switch speeds. It has the following main advantages: lower power and high-speed operation, reduced circuit complexity for implementing a given function. Nanoelectronic devices including RTD are displaying their significance before the scaling limits of conventional CMOS devices are reached.RTD on GaAs substrate has been fabricated by MBE and conventional technics. The characteristics of RTD material and devices are measured and analyzed. The effects of the double-barrier and single well structure on the RTD device parameters are analyzed. Some examples are given in RTD and RTD based logic circuits. The following are the main products of this paper:1. The AlAs/GaAs/InGaAs/GaAs/AlAs RTD is designed and fabricated with good performance. The devices have shown excellent I-V characteristics. Its peak-to-valley current ratio is 5.1:1 at room temperature. Its density of peak current is 73.6kA/cm2.2. The method of utilizing X-ray double crystal diffraction and photoluminescence apparatus to measure the RTD material at room temperature has been researched.3. The testing results of the RTD material are simulated and analyzed by RADS Mercury software. We introduce two-speed growth and growth interrupts to optimize the MBE technics. The experiment data of RTD materials grown by the optimized technics are agreed with the simulation results, so that the optimize method is verified.4. The effects of the parameters of the double-barrier and single well structure on the RTD I-V characteristics, like Ip, Iv and Vp, are analyzed according to the testing results at room temperature; also, the"apparent positive resistance","plateau-like behavior"and"hysteresis"phenomena are analyzed , proposed the origin mechanism.