Research On Resonant Tunneling Devices And Circuits

This thesis is based on the project"research on new compound semi-conductor device and circuit"which is studied by new semi-conductor device and integrating team in Telecommunication College in TJU and National Defense Technology Point Laboratory. For researching the characteristics of resonant tunneling diode (RTD) and resonant tunneling transistor (RTT), device fabrication, device test and comparison and analysis to the test results have been done. So far, we have fabricated resonant tunneling diode of high quality and the first resonant tunneling transistor in our country, whose current peak-valley ratio (PVCR) reaches 47.The thesis introduces completely the RTD and RTT research process, including material and layout design, chip fabrication, test, the result analysis. We analyzed two aspects of theRTD results: the I-V characteristic difference between emitter grounding and collector grounding and the positive resistance in negative region. After analyzing the test result of RTT, the thesis discusses two questions: the I-V characteristic difference between emitter grounding and collector grounding, and the threshold voltage VT shifting with the gate voltage. Then we researched on the application of resonant tunneling devices in optoelectronic integrated circuit (OEIC), and the working and logical functions of the circuits were validated. We also have a discuss on semiconductor process, including MBE, photolithography, etching, and the growth of thin film.This thesis gives the whole dissertation on the device design, test and analysis to the RTD and RTT. This work is good for the research and application of the RTD and RTT in the future.