Research On High-frequency Electromagnetic Characteristics Of New TSV Structure

In recent years,3D packaging based on Through-Silicon Vias?TSV?has become one of the mainstream technologies for microelectronic packaging.TSV makes stacks chips finish vertical interconnection,to make effectively reduce interconnect power consumption and delay,which has been received widespread attention in the industry.However,3D packaging TSV technology,achieved high-density integration,has caused TSV to face serious signal crosstalk problems,especially in high frequency bands.Therefore,the research on TSV signal crosstalk problem is the key to the development of this technology.This thesis focuses on the problems faced by the aforementioned TSVs.Firstly,in view of the problems faced by TSV,and the excellent electrical,thermal and mechanical properties of carbon nanomaterials,a new TSV structure was proposed based on the traditional TSV structure,and its fabrication process was researched and experimented,including etching silicon holes,depositing functional layers,growing carbon nanomaterials and electroplating copper.Proved that the proposed new TSV structure is feasible in current preparation technology.Secondly,an equivalent circuit model of the new TSV structure is established,and the research on the extraction of parasitic parameters of the new TSV structure was compared with the simulation results,to verify the correctness of the proposed model and parameter extraction formula.The parasitic effects of the new TSV structure,using electromagnetic simulation software,is analyzed.The improvement of the new TSV structure on the parasitic effect,compared with tradition model,is effective.The transmission performance of the new TSV structure is analyzed at high frequencies,and compared with the traditional model to verify that the transmission performance of the new TSV structure is better than the traditional model.Finally,the electromagnetic characteristics of the new TSV array,using transmission line theory,are analyzed.Taking two TSVs as examples,the equivalent circuit model is established,and the research on the mutual inductance and mutual capacitance between TSVs.The effect of new TSV structure on reducing signal interference is researched,in which the simulation results show that the return loss S₁₁ of the traditional TSV structure is better than that of the new TSV structure and the return loss of the two is basically the same after the signal frequency exceeds 30GHz;The insertion loss S₂₁ of the new TSV structure is significantly better than that of the traditional structure,and this difference is gradually increasing with increasing frequency.Therefore,the transmission characteristics of the new TSV model are far superior to the traditional model,to effectively solve the key problems of TSV technology development.