Research On The Electromagnetic Characteristics Of High-Speed Circuit Board And TSV Based 3-D Packaging Integration

Creating equivalent circuit model of the power supply network for printed circuit board and 3-D package is a basic research on power integrity in high speed circuit design. With the superior electrical performance in the speed and power consumption, and good compatibility with CMOS technology, TSV (Through Silicon Via) has become a key interconnect technology for three-dimensional integrated systems in semiconductor industry. To speed up the process development of three-dimensional integrated system, it necessitates carrying out an extensive research work to solve the key technical problems in the manufacturing and design.The main research work in this dissertation is to develop the modelling and simulation methods for the electromagnetic characteristics of high-speed circuit board and the three dimensional integration with TSV technology, and put the focus on the power networks model of circuit boards and the TSVs modelling with the silicon semiconductor effects. In this dissertation, the full-wave calculation method of the parasitic inductance has been studied for the bypass structure of the PCB and package’s power plane. The distribution characteristics of self-impedance and transfer-impedance are presented, the decoupling method and the design method of planar electromagnetic band gap structure are proposed. The Poisson and Poisson-Boltzmann equations are used respectively to obtain the effects of semiconductor in the modelling of TSV; furthermore, a parameter estimation method of SPICE model was proposed for the transient voltage suppressor, then, the proposed method is validated by comparing the results of circuit simulation and experimental measurement in the electrostatic discharge immunity test. The main contributions of the dissertation are outlined as follows:1. The full-wave formula of the parasitic inductance has been studied for the bypass structure of the PCB and package’s power plane, and this calculation is based on the scattering coefficients matrix method; the method is studied to extract the impedance by measuring the networks parameter, the impedance characteristics of capacitor and power plane by using low-impedance measurement; the full-wave equivalent circuit is created for bypass structure, the proposed circuit model is validated by the low-impedance measurement.2. By using contour integral equation of planar circuit, the dielectric constant and the dissipation factor of the PCB substrate are extracted from measurement data, the distribution characteristics of self-impedance and transfer-impedance is given by combining the ports reduction method, the decoupling method is presented for switching noise isolation. The design method of planar electromagnetic bandgap structure are proposed to suppress the simultaneously switching noise, and this method combines the integral equation equivalent circuit with transmission line, to solve the problems of design size and optimization, furthermore, it is discussed to attach lumped inductors on power plane, this connecting method gets better stop-band performance.3. The small signal method is presented to solve the impedance problem of TSV power networks with DC bias, the Lambert W function is proposed to get the formula of depletion width by solving the Poisson equation analytically, the high-frequency MOS capacitance is obtained while considering the charges at the semiconductor-insulator interface; the electrical model of power-ground TSVs pair and array is presented based on the depletion width and the insulating dielectric layer assumption. Furthermore, the capacitive effect of power TSVs array on signal transmission is discussed at the interposer layer.4. From the Poisson-Boltzmann equation in a cylindrical coordinate system, the accurate charge distribution is derived and obtained for TSV interconnection in the depletion layer of semiconductor, the calculation method of MOS(metal-oxide-semiconductor) capacitor is given. Considering the effects of charge distribution on the resistivity, the sheet resistor is proposed to describe the depletion layer. The resistance and inductance parameters of TSV are extracted by using the partial element equivalent circuit method. Finally, the full RLGC (resistance-inductance-capacitance-conductance) electrical model of TSV interconnection is presented first time, and the transmission characteristics of signal-ground TSV structure are studied.5. Based on the semiconductor behavior, a parameter estimation method of SPICE model is proposed for the transient voltage suppressor, the proposed method is validated by comparing the results of circuit simulation and experimental measurement in the electrostatic discharge immunity test. The proposed model is used to design the transient electromagnetic pulse protection at the equipment ports, and gives a valuable design method for engineering application.