Modeling Of Carbon Nanotube Field Effect Transistor And Characterization Of Electrothermal Coupling Effect

Based on deep understanding of basic properties of carbon nanotubes (CNT), this thesis is focused on modeling and simulation of carbon nanotube field-effect transistors (CNTFET). At the same time, electrothermal effects on the CNT interconnect and CNTFET performances are investigated numerically.At first, electrothermal characterization of CNT interconnects is carried out. Mean free path of electrons in the metallic CNT, effective resistances and some other electrical parameters are derived. More attention is paid to the effect of temperature variation on the CNT electrical properties. By solving 1-D heat conduction equation, the temperature distribution profile along the CNT is got and self-heating effect on the CNT interconnect is further examined, such as signal delay and crosstalk.Then, modeling and simulation of CNTFET and the electrothermal effect on its performance are performed. Based on its semi-classical transport model, an analytical CNTFET model for both single- and double- walled CNTs is proposed. In particular, much attention is paid to the electrothermal characterization of CNTFET with self-heating effect on its performance studied. The CNTFET current is modified so as to incorporate temperature distribution factors and then we solve heat conduction equation using finite difference method to get its temperature distribution along the CNT channel. Further, self-heating effects on CNTFET current, signal delay and cutoff frequency are investigated. Through these studies, we can evaluate scalability of CNTFET performance and compare them with silicon counterparts.Finally, electrothermal coupled model for multi-channels case is shown and this makes the model rigorously.