The Circuit Design Of Multi-Logic In-Memory Operation Circuit Based On Interleaved Coupling 5T2R

Nowadays,the Von Neumann architecture,proposed in the last century,is still used in mainstream computers,which are simply divided into several independent modules connected by a bus.As the average annual growth rate of processor performance is much higher than the average annual growth rate of memory performance,when the memory computing power is strong enough,the memory operation speed has far exceeded the memory access speed,and even more devices cannot be fully utilized.This is the Von Neumann bottleneck and memory wall problem that is currently difficult to break through.To solve these problems,we urgently need to find some new structures and methods.In recent years,in order to break through the limitations of traditional RAM,various new types of RAM have emerged one after another.in which,the RRAM is a new type of memory,as the data is not lost with its simple structure,high integration and low power consumption,once seen as the emerging devices which break the limitation of traditional devices.It can replace Flash memory and become the new mainstream memory in the future.In addition,compared with MOS device structure,RRAM has higher anti-interference ability.At the same time,data stored as RRAM is also non-volatile,which will not be lost after the system power failure,with its stable and efficient work.In this paper,a 5T2 R interleaved coupling circuit structure based on RRAM is proposed,which can realize multiple logical operation functions of two one-bit operands in the memory through different coupling paths and two different encoding methods..This structure provides a variety of logical operations in two modes,One is to use two RRAM and four CMOS transistors to take the resistance state as the input,and the new operation result is saved as the new resistance state.Change the IMPLY operation,AND operation,zero setting operation and hold operation of the original resistance state.This scheme can change different input voltages to achieve different combination functions;The other is to realize the logic AND,logic OR operation to overcome the crossing of resistance states according to different connection modes.At the same time,XOR operation can be realized by using different coding modes.Moreover,the first mock exam is implemented by using different cycles or different cells,and the carry and sum of half adder is realized by operation and XOR operation.The calculation of the mode does not need to change the resistance state of writing,and the result is read directly through the sensitive amplifier.In this mode,various logic operations do not need to change the original state,therefore,the service life of the RRAM is improved.Finally,the simulation of the proposed unit is carried out.Based on the analysis,based on the same process technology,the Scouting logic structure has resistance state crossover,so that the success rate of logical AND and logical OR operations is more than 90%.For the proposed5T2 R interleaving The coupling circuit structure overcomes the influence of resistance crossover on the result,so that the operation success rate can reach 100%,which reflects the reliability of the structure.The proposal of this scheme provides a new idea for the research of RRAM.