A Study On Memristor With Optcal Functionality Based On SPR Effect Of Prism Structure

For the first time,a novel memristor optical reading method was creatively proposed and designed by the surface plasmon resonance effect excited by prism.According to simulation and experimental verification,this reading method is suitable for a thin film memristor of Ag/a-Si(Ag/a-SiO_x)structure.This method mainly utilizes the change of optical properties of dielectric thin films formed by silver electromigration on dielectric thin films such as amorphous silicon and amorphous silicon oxide,and proposes a method for detecting such changes by surface plasmon resonance effect.Thereby transmission of information from the electrical signal to the optical signal is realized,that is,the optical reading function of the resistance state of the memristor.Based on the proposed principle of optical reading,the feasibility of the method is verified by simulation and experiment.The reflected light of the Ag/a-SiO_x/Al memristor with prism coupling structure is realized for the first time through the built test system,and the electrical modulation with a modulation amplitude of up to 4%.The effects of device structure parameters on SPR and memristive properties were also investigated.From the simulation analysis and experimental results analysis,the following conclusions are drawn:1.The effect of device structure parameters on I-V characteristics.As the x in a-SiO_x decreases,the write voltage of the device gradually decreases,that is,at a lower voltage bias,the memristor can transition from a high resistance state to a low resistance state.As the thickness of the a-SiOx film increases,the write voltage of the memristor gradually increases,and the resistance of the device in the high resistance state also increases significantly.The smaller the thickness of the film,the larger the number of cycles that can be cycled,and the more stable the resistance characteristics of the device.2.The effect of device structure parameters on SPR characteristics.The influence of the thickness of the Ag film on the resonance position is very weak;when the thickness of the silver film increases,the resonance depth of the formant rapidly decreases,and the amplitude becomes larger as the thickness of the silver film increases.The thickness of the dielectric layer a-SiO_x film will affect the resonance mode of the excitation,and the thickness variation will cause the resonance of the ordinary SPR to gradually move away from the excitation condition of the original resonance mode,causing the position and intensity of the resonance peak.Offset or even disappear.When the ratio of silicon to oxygen increases,the increase in refractive index causes the position of the formant to shift toward a large angle without changing the excitation resonance mode.3.The effect of different bias on SPR characteristics.When different bias voltages was applied,the device undergoes a resistance change,while the formant shifts and the attenuation of the reflected light increases.The attenuation trend of the reflected light and the change trend of the resistance have a corresponding relationship to a certain extent,and the optical relationship of the input electrical signal or the resistive state in the memristor can be realized by the corresponding relationship.